Self-diffusion in extrinsic silicon using isotopically enriched 30Si layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 A, 2001, Pages

  Nakabayashi, Yukio ^d   Osman, Hirman I ^d   Segawa, Toru ^d   Saito, Kazumasa ^d   Matsumoto, Satoru ^d   Murota, Junichi ^a,d   Wada, Kazumi ^b,d   Abe, Takao ^c,d  

^a TOHOKU UNIVERSITY   (Japan)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c Isobe R and D Center   (Japan)

^d KEIO UNIVERSITY   (Japan)

Author keywords

Doping effect; Isotopic heterostructure; Self diffusion; Silicon; Stable 30Si tracer

Indexed keywords

BORON; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NUMERICAL ANALYSIS; RADIOACTIVE TRACERS; SECONDARY ION MASS SPECTROMETRY;

EXTRINSIC SILICON; ISOTOPIC HETEROSTRUCTURE; ISOTOPICALLY ENRICHED SILICON LAYER;

SEMICONDUCTING SILICON;

EID: 0035271846     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l181     Document Type: Letter

References (10)

1. R. F. Peart: Phys. Status Solidi 15 (1966) K119.
2. B. J. Masters and J. M. Fairfield: Appl. Phys. Lett. 8 (1966) 280.
3. J. M. Fairfield and B. J. Masters: J. Appl. Phys. 38 (1967) 3148.
4. H. J. Mayer, H. Mehrer and K. Maier: Inst. Phys. Conf. Ser. 31 (1977) 186.
5. H. Bracht, E. E. Haller and R. Clark-Phelps: Phys. Rev. Lett. 81 (1998) 393.
6. A. Ural, P. B. Griffin and J. D. Plummer: Appl. Phys. Lett. 73 (1998) 1706.
7. Y. Nakabayashi, T. Segawa, H. I. Osman, K. Saito, S. Matsumoto, J. Murota, K. Wada and T. Abe: to be published in Jpn. J. Appl. Phys. 40 (2001).
8. M. E. Levinshtein and S. L. Rumyantsev: Handbook Series on Semiconductor Parameters, eds. M. Levinshtein, S. Rumyantsev and M. Shur (World Scientific Inc., Singapore, 1996) Vol. 1, Chap. 1, p. 1.
9. S. M. Hu: Atomic Diffusion in Semiconductors, ed. D. Shaw (Plenum Press, London, 1973) Chap. 5, p. 217.
10. R. N. Ghoshtagore: Phys. Rev. Lett. 16 (1966) 890.