Si self-diffusivity using isotopically pure 30Si epitaxial layers

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 330-333

  Aid, S R ^a   Sakaguchi, T ^a   Toyonaga, K ^a   Nakabayashi, Y ^a   Matumoto, S ^a   Sakuraba, M ^b   Shimamune, Y ^b   Hashiba, Y ^b   Murota, J ^b   Wada, K ^c   Abe, T ^d  

^a KEIO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

CZ Si substrate; Self diffusivity; Si isotopes

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); ENTHALPY; FURNACES; ISOTOPES; SILICON; TEMPERATURE DISTRIBUTION;

ARRHENIUS EQUATIONS; CZ-SI SUBSTRATE; SELF-DIFFUSIVITY; SI ISOTOPES;

DIFFUSION;

EID: 10644228583     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.055     Document Type: Conference Paper

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