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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3304-3310

Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon/natural silicon heterostructures

(8) Nakabayashi, Yukio a Osman, Hirman I a Toyonaga, Kazunari a Yokota, Kaori a Matsumoto, Satoru a Murota, Junichi b Wada, Kazumi c Abe, Takao d

a KEIO UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c Massachusetts Institute of Technology Cambridge (United States)

d SHIN ETSU CHEMICAL CO LTD (Japan)

Author keywords

Extrinsic diffusion; Fractional contriburion; Isotope heterostructure; Pure 30Si; Self diffusion; Silicon

Indexed keywords

DIFFUSION; FERMI LEVEL; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS;

FRACTIONAL CONTRIBUTION; GAS SOURCE MOLECULAR BEAM EPITAXY; SELF-DIFFUSION; SILICON HETEROSTRUCTURE; TEMPERATURE DEPENDENCE;

SEMICONDUCTING SILICON;

EID: 0042381863 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.3304 Document Type: Article

Times cited : (10)

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