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Volumn 124-125, Issue SUPPL., 2005, Pages 241-244

The effect of biaxial strain on impurity diffusion in Si and SiGe

Author keywords

Biaxial strain; Diffusion studies; Molecular beam epitaxy

Indexed keywords

DIFFUSION; MOLECULAR BEAM EPITAXY; STRAIN; TENSILE STRESS;

EID: 27944503617     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.078     Document Type: Conference Paper
Times cited : (16)

References (24)
  • 1
    • 85166075492 scopus 로고    scopus 로고
    • MRS 2004 spring meeting proceeding, symposium B: High-mobility group-IV materials and devices
    • MRS 2004 Spring Meeting Proceeding, Symposium B: High-Mobility Group-IV Materials and Devices, MRS Proceedings, vol. 809.
    • MRS Proceedings , vol.809


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.