The vacancy in silicon: Identical diffusion properties at cryogenic and elevated temperatures

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Watkins, George D ^a,b  

^a LEHIGH UNIVERSITY   (United States)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MIGRATIONAL PROPERTIES; NEUTRAL VACANCY;

CRYOGENICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; HIGH TEMPERATURE EFFECTS;

SILICON;

EID: 44649141875     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937198     Document Type: Article

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