Graphene field-effect transistors based on boron-nitride dielectrics

Proceedings of the IEEE

Volumn 101, Issue 7, 2013, Pages 1609-1619

  Meric, Inanc ^a   Dean, Cory R ^a,b   Petrone, Nicholas ^a   Wang, Lei ^a   Hone, James ^a   Kim, Philip ^a   Shepard, Kenneth L ^a  

^a Columbia University ^*  (United States)

^b CITY COLLEGE OF NEW YORK   (United States)

Author keywords

Graphene field effect transistors (GFETs); hexagonal boron nitride (hBN)

Indexed keywords

BORON NITRIDE; DIELECTRIC MATERIALS; GRAPHENE; GRAPHENE TRANSISTORS; III-V SEMICONDUCTORS; NITRIDES;

ELECTRONIC APPLICATION; GRAPHENE FIELD EFFECT TRANSISTOR (GFETS); GRAPHENE FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON NITRIDE (H-BN); INTRINSIC CHARACTERISTICS; MATERIAL SYNTHESIS; NANO-SCALE MATERIALS;

FIELD EFFECT TRANSISTORS;

EID: 84879880464     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2257634     Document Type: Article

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