-
1
-
-
72549095100
-
Nanotube electronics for radiofrequency applications
-
C. Rutherglen, D. Jain, and P. Burke, "Nanotube electronics for radiofrequency applications," Nature Nanotechnol., vol. 4, pp. 811-819, 2009.
-
(2009)
Nature Nanotechnol.
, vol.4
, pp. 811-819
-
-
Rutherglen, C.1
Jain, D.2
Burke, P.3
-
2
-
-
77955231284
-
Graphene transistors
-
F. Schwierz, "Graphene transistors," Nature Nanotechnol., vol. 5, pp. 487-496, 2010.
-
(2010)
Nature Nanotechnol.
, vol.5
, pp. 487-496
-
-
Schwierz, F.1
-
3
-
-
34948858511
-
Carbon-based electronics
-
P. Avouris, Z. Chen, and V. Perebeinos, "Carbon-based electronics," Nature Nanotechnol., vol. 2, pp. 605-615, 2007.
-
(2007)
Nature Nanotechnol.
, vol.2
, pp. 605-615
-
-
Avouris, P.1
Chen, Z.2
Perebeinos, V.3
-
4
-
-
0042991275
-
Ballistic carbon nanotube field-effect transistors
-
Aug.
-
A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. J. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, pp. 654-657, Aug. 2003.
-
(2003)
Nature
, vol.424
, pp. 654-657
-
-
Javey, A.1
Guo, J.2
Wang, Q.3
Lundstrom, M.4
Dai, H.J.5
-
5
-
-
2142649257
-
High-field quasi-ballistic transport in short carbon nanotubes
-
Mar.
-
A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. J. Dai, "High-field quasi-ballistic transport in short carbon nanotubes," Phys. Rev. Lett., vol. 92, pp. 106804-1-106804-4, Mar. 2004.
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 106804-106801
-
-
Javey, A.1
Guo, J.2
Paulsson, M.3
Wang, Q.4
Mann, D.5
Lundstrom, M.6
Dai, H.J.7
-
6
-
-
1642528399
-
Electron-phonon scattering in metallic single-walled carbon nanotubes
-
J. Y. Park, S. Rosenblatt, Y. Yaish, V. Sazonova, H. Ustunel, S. Braig, T. A. Arias, P. W. Brouwer, and P. L. McEuen, "Electron-phonon scattering in metallic single-walled carbon nanotubes," Nano Lett., vol. 4, pp. 517-520, Mar. 2004.
-
(2004)
Nano Lett. Mar.
, vol.4
, pp. 517-520
-
-
Park, J.Y.1
Rosenblatt, S.2
Yaish, Y.3
Sazonova, V.4
Ustunel, H.5
Braig, S.6
Arias, T.A.7
Brouwer, P.W.8
McEuen, P.L.9
-
7
-
-
43049170468
-
Ultrahigh electron mobility in suspended graphene
-
K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormer, "Ultrahigh electron mobility in suspended graphene," Solid State Commun., vol. 146, pp. 351-355, 2008.
-
(2008)
Solid State Commun.
, vol.146
, pp. 351-355
-
-
Bolotin, K.I.1
Sikes, K.J.2
Jiang, Z.3
Klima, M.4
Fudenberg, G.5
Hone, J.6
Kim, P.7
Stormer, H.L.8
-
8
-
-
49449091072
-
Approaching ballistic transport in suspended graphene
-
X. Du, I. Skachko, A. Barker, and E. Y. Andrei, "Approaching ballistic transport in suspended graphene," Nature Nanotechnol., vol. 3, pp. 491-495, 2008.
-
(2008)
Nature Nanotechnol.
, vol.3
, pp. 491-495
-
-
Du, X.1
Skachko, I.2
Barker, A.3
Andrei, E.Y.4
-
9
-
-
33744469329
-
Electronic confinement and coherence in patterned epitaxial graphene
-
C. Berger, S. Zhimin, L. Xuebin, W. Xiaosong, N. Brown, C. Naud, D. Mayou, L. Tianbo, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, "Electronic confinement and coherence in patterned epitaxial graphene," Science, vol. 312, pp. 1191-1196, 2006.
-
(2006)
Science
, vol.312
, pp. 1191-1196
-
-
Berger, C.1
Zhimin, S.2
Xuebin, L.3
Xiaosong, W.4
Brown, N.5
Naud, C.6
Mayou, D.7
Tianbo, L.8
Hass, J.9
Marchenkov, A.N.10
Conrad, E.H.11
First, P.N.12
De Heer, W.A.13
-
10
-
-
77957908617
-
Boron nitride substrates for high-quality graphene electronics
-
C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, "Boron nitride substrates for high-quality graphene electronics," Nature Nanotechnol., vol. 5, pp. 722-726, 2010.
-
(2010)
Nature Nanotechnol.
, vol.5
, pp. 722-726
-
-
Dean, C.R.1
Young, A.F.2
Meric, I.3
Lee, C.4
Wang, L.5
Sorgenfrei, S.6
Watanabe, K.7
Taniguchi, T.8
Kim, P.9
Shepard, K.L.10
Hone, J.11
-
11
-
-
3142671577
-
AC performance of nanoelectronics: Towards a ballistic THz nanotube transistor
-
P. J. Burke, "AC performance of nanoelectronics: Towards a ballistic THz nanotube transistor," Solid State Electron., vol. 48, pp. 1981-1986, 2004.
-
(2004)
Solid State Electron.
, vol.48
, pp. 1981-1986
-
-
Burke, P.J.1
-
12
-
-
28444442341
-
Assessment of high-frequency performance potential of carbon nanotube transistors
-
Nov
-
J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, "Assessment of high-frequency performance potential of carbon nanotube transistors," IEEE Trans. Nanotechnol., vol. 4, no. 6, pp. 715-721, Nov. 2005.
-
(2005)
IEEE Trans. Nanotechnol.
, vol.4
, Issue.6
, pp. 715-721
-
-
Guo, J.1
Hasan, S.2
Javey, A.3
Bosman, G.4
Lundstrom, M.5
-
13
-
-
31144439296
-
High-frequency performance projections for ballistic carbon-nanotube transistors
-
Jan
-
S. Hasan, S. Salahuddin, M.Vaidyanathan, and M. A. Alam, "High-frequency performance projections for ballistic carbon-nanotube transistors," IEEE Trans. Nanotechnol., vol. 5, no. 1, pp. 14-22, Jan. 2006.
-
(2006)
IEEE Trans. Nanotechnol.
, vol.5
, Issue.1
, pp. 14-22
-
-
Hasan, S.1
Salahuddin, S.2
Vaidyanathan, M.3
Alam, M.A.4
-
14
-
-
50349089746
-
Examination of the high-frequency capability of carbon nanotube FETs
-
D. L. Pulfrey and L. Chen, "Examination of the high-frequency capability of carbon nanotube FETs," Solid State Electron., vol. 52, pp. 1324-1328, 2008.
-
(2008)
Solid State Electron
, vol.52
, pp. 1324-1328
-
-
Pulfrey, D.L.1
Chen, L.2
-
15
-
-
1842528906
-
Frequency dependent characterization of transport properties in carbon nanotube transistors
-
J. Appenzeller and D. J. Frank, "Frequency dependent characterization of transport properties in carbon nanotube transistors," Appl. Phys. Lett., vol. 84, pp. 1771-1773, 2004.
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 1771-1773
-
-
Appenzeller, J.1
Frank, D.J.2
-
16
-
-
2342527945
-
Carbon nanotube transistor operation at 2.6 GHz
-
S. Li, Z. Yu, S.-F. Yen, W. C. Tang, and P. J. Burke, "Carbon nanotube transistor operation at 2.6 GHz," Nano Lett., vol. 4, pp. 753-756, 2004.
-
(2004)
Nano Lett.
, vol.4
, pp. 753-756
-
-
Li, S.1
Yu, Z.2
Yen, S.-F.3
Tang, W.C.4
Burke, P.J.5
-
17
-
-
33749003487
-
Analysis of the frequency response of carbon nanotube transistors
-
Sep
-
D. Akinwande, G. F. Close, and H. S. P. Wong, "Analysis of the frequency response of carbon nanotube transistors," IEEE Trans. Nanotechnol., vol. 5, no. 5, pp. 599-605, Sep. 2006.
-
(2006)
IEEE Trans. Nanotechnol.
, vol.5
, Issue.5
, pp. 599-605
-
-
Akinwande, D.1
Close, G.F.2
Wong, H.S.P.3
-
18
-
-
10844284786
-
Percolation in transparent and conducting carbon nanotube networks
-
L. Hu, D. S. Hecht, and G. Gruner, "Percolation in transparent and conducting carbon nanotube networks," Nano Lett., vol. 4, pp. 2513-2517, 2004
-
(2004)
Nano Lett.
, vol.4
, pp. 2513-2517
-
-
Hu, L.1
Hecht, D.S.2
Gruner, G.3
-
19
-
-
34249709521
-
Experimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistors
-
C. Kocabas, N. Pimparkar, O. Yesilyurt, S. J. Kang, M. A. Alam, and J. A. Rogers, "Experimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistors," Nano Lett., vol. 7, pp. 1195-1202, 2007.
-
(2007)
Nano Lett.
, vol.7
, pp. 1195-1202
-
-
Kocabas, C.1
Pimparkar, N.2
Yesilyurt, O.3
Kang, S.J.4
Alam, M.A.5
Rogers, J.A.6
-
20
-
-
67649214239
-
80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes
-
Art. ID 243505.
-
L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. P. Bourgoin, A. A. Green, and M. C. Hersam, "80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes," Appl. Phys. Lett., vol. 94, 2009, Art. ID 243505.
-
(2009)
Appl. Phys. Lett.
, vol.94
-
-
Nougaret, L.1
Happy, H.2
Dambrine, G.3
Derycke, V.4
Bourgoin, J.P.5
Green, A.A.6
Hersam, M.C.7
-
21
-
-
34248360702
-
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
-
S. J. Kang, C. Kocabas, T. Ozel, M. Shim, N. Pimparkar, M. A. Alam, S. V. Rotkin, and J. A. Rogers, "High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes," Nature Nanotechnol., vol. 2, pp. 230-236, 2007.
-
(2007)
Nature Nanotechnol.
, vol.2
, pp. 230-236
-
-
Kang, S.J.1
Kocabas, C.2
Ozel, T.3
Shim, M.4
Pimparkar, N.5
Alam, M.A.6
Rotkin, S.V.7
Rogers, J.A.8
-
22
-
-
40449128459
-
Radio frequency analog electronics based on carbon nanotube transistors
-
C. Kocabas, H.-S. Kim, T. Banks, J. A. Rogers, A. A. Pesetski, J. E. Baumgardner, S. V. Krishnaswamy, and H. Zhang, "Radio frequency analog electronics based on carbon nanotube transistors," Proc. Nat. Acad. Sci., USA, vol. 105, pp. 1405-1409, 2008.
-
(2008)
Proc. Nat. Acad. Sci., USA
, vol.105
, pp. 1405-1409
-
-
Kocabas, C.1
Kim, H.-S.2
Banks, T.3
Rogers, J.A.4
Pesetski, A.A.5
Baumgardner, J.E.6
Krishnaswamy, S.V.7
Zhang, H.8
-
23
-
-
58149173945
-
Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays
-
M. Engel, J. P. Small, M. Steiner, M. Freitag, A. A. Green, M. C. Hersam, and P. Avouris, "Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays," ACS Nano, vol. 2, pp. 2445-2452, 2008.
-
(2008)
ACS Nano
, vol.2
, pp. 2445-2452
-
-
Engel, M.1
Small, J.P.2
Steiner, M.3
Freitag, M.4
Green, A.A.5
Hersam, M.C.6
Avouris, P.7
-
24
-
-
66449101427
-
High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes
-
C. Kocabas, S. Dunham, Q. Cao, K. Cimino, X. Ho, H.-S. Kim, D. Dawson, J. Payne, M. Stuenkel, H. Zhang, T. Banks, M. Feng, S. V. Rotkin, and J. A. Rogers, "High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes," Nano Lett., vol. 9, pp. 1937-1943, 2009.
-
(2009)
Nano Lett.
, vol.9
, pp. 1937-1943
-
-
Kocabas, C.1
Dunham, S.2
Cao, Q.3
Cimino, K.4
Ho, X.5
Kim, H.-S.6
Dawson, D.7
Payne, J.8
Stuenkel, M.9
Zhang, H.10
Banks, T.11
Feng, M.12
Rotkin, S.V.13
Rogers, J.A.14
-
25
-
-
64549111675
-
RF performance of top-gated, zero-bandgap graphene field-effect transistors
-
I. Meric, N. Baklitskaya, P. Kim, and K. L. Shepard, "RF performance of top-gated, zero-bandgap graphene field-effect transistors," in Int. Electron Devices Meeting Tech. Dig., 2008, pp. 513-516.
-
(2008)
Int. Electron Devices Meeting Tech. Dig.
, pp. 513-516
-
-
Meric, I.1
Baklitskaya, N.2
Kim, P.3
Shepard, K.L.4
-
26
-
-
60349097486
-
Operation of graphene transistors at gigahertz frequencies
-
Y.-M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer, and P. Avouris, "Operation of graphene transistors at gigahertz frequencies," Nano Lett., vol. 9, pp. 422-426, 2009.
-
(2009)
Nano Lett.
, vol.9
, pp. 422-426
-
-
Lin, Y.-M.1
Jenkins, K.A.2
Valdes-Garcia, A.3
Small, J.P.4
Farmer, D.B.5
Avouris, P.6
-
27
-
-
67649304648
-
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates,"
-
Jun
-
J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, G. Jernigan, J. L. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, and D. K. Gaskill, "Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates," IEEE Electron Device Lett., vol. 30, no. 6, pp. 650-652, Jun. 2009.
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.6
, pp. 650-652
-
-
Moon, J.S.1
Curtis, D.2
Hu, M.3
Wong, D.4
McGuire, C.5
Campbell, P.M.6
Jernigan, G.7
Tedesco, J.L.8
Vanmil, B.9
Myers-Ward, R.10
Eddy, C.11
Gaskill, D.K.12
-
28
-
-
77958052204
-
Sub-100 nm channel length graphene transistors
-
L. Liao, J. Bai, R. Cheng, Y.-C. Lin, S. Jiang, Y. Qu, Y. Huang, and X. Duan, "Sub-100 nm channel length graphene transistors," Nano Lett., vol. 10, pp. 3952-3956, 2010.
-
(2010)
Nano Lett.
, vol.10
, pp. 3952-3956
-
-
Liao, L.1
Bai, J.2
Cheng, R.3
Lin, Y.-C.4
Jiang, S.5
Qu, Y.6
Huang, Y.7
Duan, X.8
-
29
-
-
76249106631
-
100-GHz transistors from wafer-scale epitaxial graphene
-
Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H. Y. Chiu, A. Grill, and P. Avouris, "100-GHz transistors from wafer-scale epitaxial graphene," Science, vol. 327, p. 662, 2010.
-
(2010)
Science
, vol.327
, pp. 662
-
-
Lin, Y.-M.1
Dimitrakopoulos, C.2
Jenkins, K.A.3
Farmer, D.B.4
Chiu, H.Y.5
Grill, A.6
Avouris, P.7
-
30
-
-
77956939304
-
High-speed graphene transistors with a self-aligned nanowire gate
-
L. Liao, Y.-C. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K. L. Wang, Y. Huang, and X. Duan, "High-speed graphene transistors with a self-aligned nanowire gate," Nature, vol. 467, pp. 305-308, 2010.
-
(2010)
Nature
, vol.467
, pp. 305-308
-
-
Liao, L.1
Lin, Y.-C.2
Bao, M.3
Cheng, R.4
Bai, J.5
Liu, Y.6
Qu, Y.7
Wang, K.L.8
Huang, Y.9
Duan, X.10
-
31
-
-
79953758358
-
High-frequency, scaled graphene transistors on diamond-like carbon
-
Y. Wu, Y.-M. Lin, A. A. Bol, K. A. Jenkins, F. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, "High-frequency, scaled graphene transistors on diamond-like carbon," Nature, vol. 472, pp. 74-78, 2011.
-
Nature
, vol.472
, Issue.2011
, pp. 74-78
-
-
Wu, Y.1
Lin, Y.-M.2
Bol, A.A.3
Jenkins, K.A.4
Xia, F.5
Farmer, D.B.6
Zhu, Y.7
Avouris, P.8
-
32
-
-
77955232280
-
Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless largearea graphene channels
-
Art. ID 094505
-
S. A. Thiele, J. A. Schaefer, and F. Schwierz, "Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless largearea graphene channels," J. Appl. Phys., vol. 107, 2010, Art. ID 094505.
-
(2010)
J. Appl. Phys.
, vol.107
-
-
Thiele, S.A.1
Schaefer, J.A.2
Schwierz, F.3
-
33
-
-
57349090160
-
Current saturation in zero-bandgap, top-gated graphene field-effect transistors
-
I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nature Nanotechnol., vol. 3, pp. 654-659, 2008.
-
(2008)
Nature Nanotechnol.
, vol.3
, pp. 654-659
-
-
Meric, I.1
Han, M.Y.2
Young, A.F.3
Ozyilmaz, B.4
Kim, P.5
Shepard, K.L.6
-
36
-
-
33846116009
-
Sorting carbon nanotubes by electronic structure using density differentiation
-
M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, and M. C. Hersam, "Sorting carbon nanotubes by electronic structure using density differentiation," Nature Nanotechnol., vol. 1, pp. 60-65, 2006.
-
(2006)
Nature Nanotechnol.
, vol.1
, pp. 60-65
-
-
Arnold, M.S.1
Green, A.A.2
Hulvat, J.F.3
Stupp, S.I.4
Hersam, M.C.5
-
37
-
-
46749136727
-
Progress towards monodisperse single-walled carbon nanotubes
-
M. C. Hersam, "Progress towards monodisperse single-walled carbon nanotubes," Nature Nanotechnol., vol. 3, pp. 387-394, 2008.
-
(2008)
Nature Nanotechnol.
, vol.3
, pp. 387-394
-
-
Hersam, M.C.1
-
38
-
-
39549121990
-
Externally assembled gate-all-around carbon nanotube field-effect transistor,"
-
Feb
-
Z. Chen, D. Farmer, S. Xu, R. Gordon, P. Avouris, and J. Appenzeller, "Externally assembled gate-all-around carbon nanotube field-effect transistor," IEEE Electron Device Lett., vol. 29, no. 2, pp. 183-185, Feb. 2008.
-
(2008)
IEEE Electron Device Lett.
, vol.29
, Issue.2
, pp. 183-185
-
-
Chen, Z.1
Farmer, D.2
Xu, S.3
Gordon, R.4
Avouris, P.5
Appenzeller, J.6
-
39
-
-
33846227905
-
Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
-
Art. ID 023516.
-
Q. Cao, M. Xia, C. Kocabas, M. Shim, J. A. Rogers, and S. V. Rotkin, "Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors," Appl. Phys. Lett., vol. 90, 2007, Art. ID 023516.
-
(2007)
Appl. Phys. Lett.
, vol.90
-
-
Cao, Q.1
Xia, M.2
Kocabas, C.3
Shim, M.4
Rogers, J.A.5
Rotkin, S.V.6
-
40
-
-
14744272771
-
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts
-
Feb.
-
A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. J. Dai, "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts," Nano Lett., vol. 5, pp. 345-348, Feb. 2005.
-
(2005)
Nano Lett.
, vol.5
, pp. 345-348
-
-
Javey, A.1
Tu, R.2
Farmer, D.B.3
Guo, J.4
Gordon, R.G.5
Dai, H.J.6
-
41
-
-
17944378392
-
Self-aligned carbon nanotube transistors with charge transfer doping
-
Mar. Art. ID 123108
-
J. Chen, C. Klinke, A. Afzali, and P. Avouris, "Self-aligned carbon nanotube transistors with charge transfer doping," Appl. Phys. Lett., vol. 86, Mar. 2005, Art. ID 123108.
-
(2005)
Appl. Phys. Lett.
, vol.86
-
-
Chen, J.1
Klinke, C.2
Afzali, A.3
Avouris, P.4
-
42
-
-
33749614917
-
Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias
-
Jul. Art. ID 023125
-
S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, "Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias," Appl. Phys. Lett., vol. 89, Jul. 2006, Art. ID 023125.
-
(2006)
Appl. Phys. Lett.
, vol.89
-
-
Koswatta, S.O.1
Hasan, S.2
Lundstrom, M.S.3
Anantram, M.P.4
Nikonov, D.E.5
-
43
-
-
38849085377
-
Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
-
Sep
-
S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, "Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2339-2351, Sep. 2007.
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.9
, pp. 2339-2351
-
-
Koswatta, S.O.1
Hasan, S.2
Lundstrom, M.S.3
Anantram, M.P.4
Nikonov, D.E.5
-
44
-
-
50349086723
-
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials
-
R. Grassi, S. Poli, S. Reggiani, E. Gnani, A. Gnudi, and G. Baccarani, "Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials," Solid State Electron., vol. 52, pp. 1329-1335, 2008.
-
(2008)
Solid State Electron.
, vol.52
, pp. 1329-1335
-
-
Grassi, R.1
Poli, S.2
Reggiani, S.3
Gnani, E.4
Gnudi, A.5
Baccarani, G.6
-
45
-
-
20844442624
-
Role of phonon scattering in carbon nanotube field-effect transistors
-
May Art. ID 193103.
-
J. Guo and M. Lundstrom, "Role of phonon scattering in carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 86, May 2005, Art. ID 193103.
-
(2005)
Appl. Phys. Lett.
, vol.86
-
-
Guo, J.1
Lundstrom, M.2
-
46
-
-
36449008742
-
Ballistic metal-oxide-semiconductor field effect transistor
-
K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor," J. Appl. Phys., vol. 76, pp. 4879-4890, 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 4879-4890
-
-
Natori, K.1
-
47
-
-
0041761616
-
Theory of ballistic nanotransistors
-
Sep
-
A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1853-1864, Sep. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.9
, pp. 1853-1864
-
-
Rahman, A.1
Guo, J.2
Datta, S.3
Lundstrom, M.S.4
-
48
-
-
36749055294
-
A selfconsistent theory for graphene transport
-
S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma, "A selfconsistent theory for graphene transport," Proc. Nat. Acad. Sci., USA, vol. 104, pp. 18392-18397, 2007.
-
(2007)
Proc. Nat. Acad. Sci., USA
, vol.104
, pp. 18392-18397
-
-
Adam, S.1
Hwang, E.H.2
Galitski, V.M.3
Das Sarma, S.4
-
49
-
-
38849201768
-
Observation of electron-hole puddles in graphene using a scanning single-electron transistor
-
J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. von Klitzing, and A. Yacoby, "Observation of electron-hole puddles in graphene using a scanning single-electron transistor," Nature Phys., vol. 4, pp. 144-148, 2008.
-
(2008)
Nature Phys.
, vol.4
, pp. 144-148
-
-
Martin, J.1
Akerman, N.2
Ulbricht, G.3
Lohmann, T.4
Smet, J.H.5
Von Klitzing, K.6
Yacoby, A.7
-
50
-
-
79951837504
-
Graphene field-effect transistors based on boron nitride gate dielectrics
-
I. Meric, C. Dean, A. Young, J. Hone, P. Kim, and K. L. Shepard, "Graphene field-effect transistors based on boron nitride gate dielectrics," in Int. Electron Devices Meeting Tech. Dig., 2010, pp. 556-559.
-
(2010)
Int. Electron Devices Meeting Tech. Dig.
, pp. 556-559
-
-
Meric, I.1
Dean, C.2
Young, A.3
Hone, J.4
Kim, P.5
Shepard, K.L.6
-
51
-
-
77956212768
-
Mobility and saturation velocity in graphene on SiO
-
Art. ID 082112.
-
V. E. Dorgan, M.-H. Bae, and E. Pop, "Mobility and saturation velocity in graphene on SiO, " Appl. Phys. Lett., vol. 97, 2010, Art. ID 082112.
-
(2010)
Appl. Phys. Lett.
, vol.97
-
-
Dorgan, V.E.1
Bae, M.-H.2
Pop, E.3
-
52
-
-
51749110481
-
Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
-
Art. ID 121402.
-
B. Huard, N. Stander, J. A. Sulpizio, and D. Goldhaber-Gordon, "Evidence of the role of contacts on the observed electron-hole asymmetry in graphene," Phys. Rev. B, Condens. Matter, vol. 78, 2008, Art. ID 121402.
-
(2008)
Phys. Rev. B, Condens. Matter
, vol.78
-
-
Huard, B.1
Stander, N.2
Sulpizio, J.A.3
Goldhaber-Gordon, D.4
-
53
-
-
70350711080
-
Notes on fermi-dirac integrals
-
3rd ed. West Lafayette Online. Available
-
R. Kim and M. S. Lundstrom, Notes on Fermi-Dirac Integrals, 3rd ed. West Lafayette, IN: Netw. Comput. Nanotechnol., 2008 Online. Available: http://nanohub.org/resources/5475
-
(2008)
Netw. Comput. Nanotechnol.
-
-
Kim, R.1
Lundstrom, M.S.2
-
54
-
-
62749140771
-
Variation tolerance in a multichannel carbon-nanotube transistor for high-speed digital circuits
-
Mar
-
A. Raychowdhury,V.K. De, J.Kurtin, S. Y. Borkar,K.Roy, and A.Keshavarzi, "Variation tolerance in a multichannel carbon-nanotube transistor for high-speed digital circuits," IEEE Trans. Electron Devices, vol. 56, no. 3, pp. 383-392, Mar. 2009.
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.3
, pp. 383-392
-
-
Raychowdhury, A.1
De, V.K.2
Kurtin, J.3
Borkar, S.Y.4
Roy, K.5
Keshavarzi, A.6
-
55
-
-
23144462910
-
The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
-
Jul.
-
Z. H. Chen, J. Appenzeller, J. Knoch, Y. M. Lin, and P. Avouris, "The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors," Nano Lett., vol. 5, pp. 1497-1502, Jul. 2005.
-
(2005)
Nano Lett.
, vol.5
, pp. 1497-1502
-
-
Chen, Z.H.1
Appenzeller, J.2
Knoch, J.3
Lin, Y.M.4
Avouris, P.5
-
56
-
-
67349132448
-
Conductance asymmetry of graphene p-n junction
-
Jun
-
T. Low, S. Hong, J. Appenzeller, S. Datta, and M. S. Lundstrom, "Conductance asymmetry of graphene p-n junction," IEEE Trans. Electron Devices, vol. 56, no. 6, pp. 1292-1299, Jun. 2009.
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.6
, pp. 1292-1299
-
-
Low, T.1
Hong, S.2
Appenzeller, J.3
Datta, S.4
Lundstrom, M.S.5
-
57
-
-
79951843150
-
Lowfield mobility and high-field drift velocity in graphene nanoribbons and graphene bilayers
-
M. Bresciani, A. Paussa, P. Palestri, D. Esseni, and L. Selmi, "Lowfield mobility and high-field drift velocity in graphene nanoribbons and graphene bilayers," in Int. Electron Devices Meeting Tech. Dig., 2010, pp. 724-727.
-
(2010)
Int. Electron Devices Meeting Tech. Dig.
, pp. 724-727
-
-
Bresciani, M.1
Paussa, A.2
Palestri, P.3
Esseni, D.4
Selmi, L.5
-
58
-
-
78649988835
-
Length scaling of carbon nanotube transistors
-
A. D. Franklin and Z. Chen, "Length scaling of carbon nanotube transistors," Nature Nanotechnol., vol. 5, pp. 858-862, 2010.
-
(2010)
Nature Nanotechnol.
, vol.5
, pp. 858-862
-
-
Franklin, A.D.1
Chen, Z.2
-
59
-
-
48649087261
-
Sub 50 nm InP HEMT device with Fmax greater than 1 THz
-
R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim, P. H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, and A. Fung, "Sub 50 nm InP HEMT device with Fmax greater than 1 THz," in Int. Electron Devices Meeting Tech. Dig., 2007, pp. 609-611.
-
(2007)
Int. Electron Devices Meeting Tech. Dig.
, pp. 609-611
-
-
Lai, R.1
Mei, X.B.2
Deal, W.R.3
Yoshida, W.4
Kim, Y.M.5
Liu, P.H.6
Lee, J.7
Uyeda, J.8
Radisic, V.9
Lange, M.10
Gaier, T.11
Samoska, L.12
Fung, A.13
-
60
-
-
81555215872
-
50-nm E-mode in Ga As PHEMTs on 100-mm InP substrate with Fmax THz
-
30.6
-
D.-H. Kim, J. A. del Alamo, P. Chen, W. Ha, M. Urteaga, and B. Brar, "50-nm E-mode In Ga As PHEMTs on 100-mm InP substrate with Fmax THz," in Int. Electron Devices Meeting Tech. Dig., 2010, pp. 692-695 (30.6).
-
Int. Electron Devices Meeting Tech. Dig.
, vol.2010
, pp. 692-695
-
-
Kim, D.-H.1
Del Alamo, J.A.2
Chen, P.3
Ha, W.4
Urteaga, M.5
Brar, B.6
-
61
-
-
84878020309
-
SiGe HBT technology with Fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay
-
30.6
-
B. Heinemann, R. Barth, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, D. Knoll, R. Kurps, M. Lisker, S. Marschmeyer, H. Rucker, D. Schmidt, J. Schmidt, M. A. Schubert, B. Tillack, C. Wipf, D. Wolansky, and Y. Yamamoto, "SiGe HBT technology with Fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay," in Int. Electron Devices Meeting Tech. Dig., 2010, pp. 692-695 (30.6).
-
(2010)
Int. Electron Devices Meeting Tech. Dig.
, pp. 692-695
-
-
Heinemann, B.1
Barth, R.2
Bolze, D.3
Drews, J.4
Fischer, G.G.5
Fox, A.6
Fursenko, O.7
Grabolla, T.8
Haak, U.9
Knoll, D.10
Kurps, R.11
Lisker, M.12
Marschmeyer, S.13
Rucker, H.14
Schmidt, D.15
Schmidt, J.16
Schubert, M.A.17
Tillack, B.18
Wipf, C.19
Wolansky, D.20
Yamamoto, Y.21
more..
-
62
-
-
66749119012
-
Largearea synthesis of high-quality and uniform graphene films on copper foils
-
X. Li, W. Cai, J. An, S. Kim, J. Nah, D.Yang, R. Piner,A.Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, "Largearea synthesis of high-quality and uniform graphene films on copper foils," Science, vol. 324, pp. 1312-1314, 2009.
-
(2009)
Science
, vol.324
, pp. 1312-1314
-
-
Li, X.1
Cai, W.2
An, J.3
Kim, S.4
Nah, J.5
Yang, D.6
Piner, R.7
Velamakanni, A.8
Jung, I.9
Tutuc, E.10
Banerjee, S.K.11
Colombo, L.12
Ruoff, R.S.13
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