Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices

ACS Nano

Volumn 6, Issue 6, 2012, Pages 5234-5241

  Bresnehan, Michael S ^a   Hollander, Matthew J ^a,b   Wetherington, Maxwell ^a   Labella, Michael ^a   Trumbull, Kathleen A ^a   Cavalero, Randal ^a   Snyder, David W ^a,b   Robinson, Joshua A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

CVD; epitaxial grapheme; field effect transistor; gate dielectric; grapheme; h BN; hexagonal boron nitride

Indexed keywords

COPPER FOILS; COPPER SUBSTRATES; ELECTRICAL TRANSPORT PROPERTIES; ELECTRONIC DEVICE; EPITAXIAL GRAPHEME; EPITAXIAL GRAPHENE; GRAPHEME; GRAPHENE TRANSISTORS; H-BN; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HIGH PERFORMANCE DEVICES; REMOTE SURFACES; STRESS-INDUCED; TEMPERATURE DEPENDENT; THERMAL CVD; TRANSFER PROCESS; WAFER-SCALE;

CHEMICAL VAPOR DEPOSITION; COPPER; CUTOFF FREQUENCY; DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; HAFNIUM OXIDES; PHOTOELECTRONS; RAMAN SPECTROSCOPY; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON NITRIDE;

BORON DERIVATIVE; ELBOR; GRAPHITE; NANOPARTICLE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MAGNETIC FIELD; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE; YOUNG MODULUS;

BORON COMPOUNDS; CRYSTALLIZATION; ELASTIC MODULUS; GRAPHITE; MACROMOLECULAR SUBSTANCES; MAGNETIC FIELDS; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOPARTICLES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84862854764     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300996t     Document Type: Article

References (55)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200
3. Shishir, R. S.; Ferry, D. K. Intrinsic Mobility in Graphene J. Phys.: Condens. Matter 2009, 21, 232204
4. Akturk, A.; Goldsman, N. Electron Transport and Full-Band Electron-Phonon Interactions in Graphene J. Appl. Phys. 2008, 103, 053702
5. Moon, J. S.; Curtis, D.; Bui, S.; Hu, M.; Gaskill, D. K.; Tedesco, J. L.; Asbeck, P.; Jernigan, G. G.; VanMil, B. L.; Myers-Ward, R. L. et al. Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers with a Peak Transconductance of 600mS/mm IEEE Electron Device Lett. 2010, 31, 260-262
6. Lin, Y. M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H. Y.; Grill, A.; Avouris, P. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene Science 2010, 327, 662
7. Farmer, D. B.; Chiu, H. Y.; Lin, Y. M.; Jenkins, K. A.; Xia, F.; Avouris, P. Utilization of a Buffered Dielectric To Achieve High Field-Effect Carrier Mobility in Graphene Transistors Nano Lett. 2009, 9, 4474-4478
8. 2 Top Dielectric Appl. Phys. Lett. 2010, 97, 123105
9. Robinson, J. A.; LaBella, M.; Trumbull, K. A.; Weng, X. J.; Cavalero, R.; Daniels, T.; Hughes, Z.; Hollander, M. J.; Fanton, M.; Snyder, D. Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties ACS Nano 2010, 4, 2667-2672
10. Hollander, M. J.; LaBella, M.; Hughes, Z.; Zhu, M.; Trumbull, K. A.; Cavalero, R.; Snyder, D. W.; Wang, X.; Hwang, E.; Datta, S. et al. Enhanced Transport and Transistor Performance with Oxide Seeded High-k Gate Dielectrics on Wafer-Scale Epitaxial Graphene Nano Lett. 2011, 11, 3601-3607
11. 3 Dielectric Layer Deposited by Atomic Layer Deposition for Graphene-Based Nanoelectronics Appl. Phys. Lett. 2008, 92, 203102
12. Lin, Y. M.; Jenkins, K. A.; Valdes-Garcia, A.; Small, J. P.; Farmer, D. B.; Avouris, P. Operation of Graphene Transistors at Gigahertz Frequencies Nano Lett. 2009, 9, 422
13. Wang, X.; Tabakman, S. M.; Dai, H. Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene J. Am. Chem. Soc. 2008, 130, 8152
14. Wu, Y. Q.; Ye, P. D.; Capano, M. A.; Xuan, Y.; Sui, Y.; Qi, M.; Cooper, J. A.; Shen, T.; Pandley, D.; Prakash, G. et al. Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of SiC Appl. Phys. Lett. 2008, 92, 092102
15. Kedzierski, J.; Hsu, P. L.; Healy, P.; Wyatt, P. W.; Keast, C. L.; Sprinkle, M.; Berger, C.; de Heer, W. A. Epitaxial Graphene Transistors on SiC Substrates IEEE Trans. Electron Devices 2008, 55, 2078-2085
16. 2 Nat. Nanotechnol. 2008, 3, 206-209
17. Hwang, E. H.; Adam, S.; Das Sarma, S. Carrier Transport in Two-Dimensional Graphene Layers Phys. Rev. Lett. 2007, 98, 18392-18397
18. Ando, T. Screening Effect and Impurity Scattering in Monolayer Graphene J. Phys. Soc. Jpn. 2006, 75, 074716
19. Fratini, S.; Guinea, F. Substrate-Limited Electron Dynamics in Graphene Phys. Rev. B 2008, 77, 195415
20. Katsnelson, M. I.; Geim, A. K. Electron Scattering on Microscopic Corrugations in Graphene Phil. Trans. R. Soc. A 2007, 366, 195-204
21. Giovannetti, G.; Khomyakov, P.; Brocks, G.; Kelly, P.; Brink, J. V. D. Substrate-Induced Band Gap in Graphene on Hexagonal Boron Nitride: Ab Initio Density Functional Calculations Phys. Rev. B 2007, 76, 073103
22. Corso, M.; Auwarter, W.; Muntwiler, M.; Tamai, A.; Greber, T.; Osterwalder, J. Boron Nitride Nanomesh Science 2004, 303, 217-220
23. Paffett, M. T.; Simonson, R. J.; Papin, P.; Paine, R. T. Borazine Adsorption and Decomposition at Pt(111) and Ru(001) Surfaces Surf. Sci. 1990, 232, 286-296
24. Nagashima, A.; Tejima, N.; Gamou, Y.; Kawai, T.; Oshima, C. Electronic Structure of Monolayer Hexagonal Boron Nitride Physisorbed on Metal Surfaces Phys. Rev. Lett. 1995, 75, 3918-3921
25. Corso, M.; Breber, T.; Osterwalder, J. h-BN on Pd(110): A Tunable System for Self-Assembled Nanostructures? Surf. Sci. 2005, 577, L78-L84
26. Preobrajenski, A. B.; Vinogradov, A. S.; Martensson, N. Monolayer of h-BN chemisorbed on Cu(111) and Ni(111): The role of the transistion metal 3d states Surf. Sci. 2005, 582, 21-30
27. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kin, P.; Shepard, L. et al. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726
28. Nag, A.; Raidongia, K.; Hembram, K. P. S.; Datta, R.; Waghmare, U. V.; Rao, C. N. R. Graphene Analogues of BN: Novel Synthesis and Properties ACS Nano 2010, 4, 1539-1544
29. Kim, E.; Yu, T.; Song, E. S.; Yu, B. CVD-Assembled Graphene Field Effect Transistors on Hexagonal Boron Nitride Appl. Phys. Lett. 2011, 98, 262103
30. Gannett, W.; Regan, W.; Watanabe, K.; Taniguchi, T.; Crommie, M. F.; Zetti, A. Boron Nitride Substrate for High Mobility Chemical Vapor Deposited Graphene Appl. Phys. Lett. 2011, 98, 242105
31. Wang, H.; Taychatanapat, T.; Hsu, A.; Watanabe, K.; Taniguchi, T.; Jarillo-Herrero, P.; Palacios, T. BN/Graphene/BN Transistors for RF Applications IEEE Electron Device Lett. 2011, 32, 1209-1211
32. Lee, K. H.; Shin, H.; Lee, J.; Lee, I.; Kim, G.; Choi, J.; Kim, S. Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics Nano Lett. 2012, 12, 714-718
33. Liao, L.; Lin, Y. C.; Bao, M.; Cheng, R.; Bai, J.; Liu, Y.; Qu, Y.; Wang, K. L.; Huang, Y.; Duan, X. High-Speed Graphene Transistors with a Self-Aligned Nanowire Gate Nat. Lett. 2010, 467, 305-308
34. Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, A. A.; Starke, U. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation Phys. Rev. Lett. 2009, 103, 246804
35. Robinson, J. A.; Hollander, M.; LaBella, M.; Trumbull, K. A.; Cavalero, R.; Snyder, D. W. Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation Nano Lett. 2011, 11, 3875-3880
36. Kim, K. K.; Hsu, A.; Jia, X.; Kim, S. M.; Shi, Y.; Hofmann, M.; Nezich, D.; Rodriguez-Nieva, J. F.; Dresselhaus, M.; Palacios, T. et al. Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition Nano Lett. 2012, 12, 161-166
37. Yates, B.; Overy, M. J.; Pirgon, O. The Anisotropic Thermal Expansion of Boron Nitride Philos. Mag. 1975, 32, 847-857
38. Li, X.; Zhu, Y.; Cai, W.; Borysiak, M.; Han, B.; Chen, D.; Piner, R. D.; Colombo, L.; Ruoff, R. S. Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes Nano Lett. 2009, 9, 4359-4363
39. Geick, R.; Perry, C. H. Normal Modes in Hexagonal Boron Nitride Phys. Rev. 1966, 146, 543-547
40. Mohiuddin, T. M. G.; Lombardo, A.; Nair, R. R.; Bonetti, A.; Savini, G.; Jalil, R.; Bonini, N.; Basko, D. M.; Galiotis, C.; Marzari, N. et al. Uniaxial Strain in Graphene by Raman Spectroscopy: G Peak Splitting, Gruneisen Parameters, and Sample Orientation Phys. Rev. B. 2009, 79, 205433
41. Kern, G.; Kresse, G.; Hafner, J. Ab Initio Calculation of the Lattice Dynamics and Phase Diagram of Boron Nitride Phys. Rev. B. 1999, 59, 8551-8559
42. Gorbachev, R. V.; Riaz, I.; Nair, R. R.; Jalil, R.; Britnell, L.; Belle, B. D.; Hill, E. W.; Novoselov, K. S.; Watanabe, K.; Taniguchi, T. et al. Hunting for Monolayer Boron Nitride: Optical and Raman Signatures Small 2011, 7, 465-468
43. Arenal, R.; Ferrari, A. C.; Reich, S.; Wirtz, L.; Mevellec, J. Y.; Lefrant, S.; Rubio, A.; Loiseau, A. Raman Spectroscopy of Single-Wall Boron Nitride Nanotubes Nano Lett. 2006, 6, 1812-1816
44. Tuinstra, F.; Koenig, J. L. Raman Spectrum of Graphite J. Chem. Phys. 1970, 53, 1126-1131
45. Moulder, J. F.; Stickle, W. F.; Sobol, P. E.; Bombem, D. Handbook of X-ray Photoelectron Spectroscopy; Chastain, J., Ed.; Perkin Elmer Co.: Eden Prairie, MN, 1992.
46. Ci, L.; Song, L.; Jin, C.; Jariwala, D.; Wu, D.; Li, Y.; Srivastava, A.; Wange, Z. F.; Storr, K.; Balicas, L. et al. Atomic layers of hybridized boron nitride and graphene domains Nat. Mater. 2010, 9, 430-435
47. Konar, A.; Fang, T.; Jena, D. Effect of High-k Gate Dielectrics on Charge Transport in Graphene-Based Field Effect Transistors Phys. Rev. B. 2010, 82, 115452
48. Hollander, M. J.; Agrawal, A.; Bresnehan, M. S.; LaBella, M.; Trumbull, K. A.; Cavalero, R.; Snyder, D. W.; Datta, S.; Robinson, J. A. Unpublished work, 2012.
49. Ristein, J.; Mammadov, S.; Seyller, Th. The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide. Condens. Mater. 2011, arXiv:1109.6907.
50. Robinson, J. A.; Trumbull, K. A.; LaBella, M.; Cavalero, R.; Hollander, M. J.; Zhu, M.; Wetherington, M. T.; Fanton, M.; Snyder, D. W. Effects of Substrate Orientation on the Structural and Electronic Properties of Epitaxial Graphene on SiC(0001) Appl. Phys. Lett. 2011, 98, 222109
51. Farmer, D.; Perebeinos, V.; Lin, Y.; Dimitrakopoulos, C.; Avouris, P. Charge Trapping and Scattering in Epitaxial Graphene Phys. Rev. B. 2011, 84, 205417
52. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Mayorov, A. S.; Peres, L. A. Electron Tunneling Through Ultrathin Boron Nitride Crystalline Barriers Nano Lett. 2012, 12, 1707-1710
53. Robinson, J. A.; LaBella, M.; Zhu, M.; Hollander, M.; Kasarda, R.; Hughes, Z.; Trumbull, K.; Cavalero, R.; Snyder, D. Contacting Graphene Appl. Phys. Lett. 2011, 98, 053103
54. Song, L.; Ci, L.; Lu, H.; Sorokin, P. B.; Jin, C.; Ni, J.; Kvashnin, A. G.; Kvashnin, D. G.; Lou, J.; Yakobson, B. I. et al. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers Nano Lett. 2010, 10, 3209-3215
55. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 2009, 324, 1312-1314