Study of channel length scaling in large-scale graphene FETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 231-232

  Han, Shu Jen ^a   Sun, Yanning ^a   Bol, Ageeth A ^a   Haensch, Wilfried ^a   Chen, Zhihong ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; DIRAC POINT; ELECTRON-HOLE ASYMMETRY; GATE LENGTH SCALING; IN-FIELD; SHORT-CHANNEL DEVICES; SHORT-CHANNEL EFFECT;

CHEMICAL VAPOR DEPOSITION; GRAPHENE;

FIELD EFFECT TRANSISTORS;

EID: 77957857516     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556239     Document Type: Conference Paper

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6. B. Huard et al., Phys. Rev. B 78, 121402, 2008.