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Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

High-frequency performance of graphene field effect transistors with saturating IV-characteristics

(7) Meric, Inanc a Dean, Cory R a Han, Shu Jen b Wang, Lei a Jenkins, Keith A b Hone, James a Shepard, K L a

a Department of Earth and Environmental Sciences (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; BIAS DEPENDENCE; CHANNEL LENGTH; HIGH FREQUENCY PERFORMANCE; IV CHARACTERISTICS; OUTPUT RESISTANCE;

BORON; ELECTRIC RESISTANCE; ELECTRON DEVICES; GATE DIELECTRICS; GRAPHENE; NITRIDES;

FIELD EFFECT TRANSISTORS;

EID: 84863039828 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2011.6131472 Document Type: Conference Paper

Times cited : (44)

References (6)

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2
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- Graphene: Electronic and Photonic Properties and Devices
- Sep 29
- P. Avouris, "Graphene: Electronic and Photonic Properties and Devices," Nano Letters, pp. 4285-4294, Sep 29 2010.
- (2010) Nano Letters , pp. 4285-4294
- Avouris, P.¹

3
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- RF performance of top-gated, zero-bandgap graphene field-effect transistors
- I. Meric, N. Baklitskaya, P. Kim, and K. L. Shepard, "RF performance of top-gated, zero-bandgap graphene field-effect transistors," in Electron Devices Meeting, 2008. IEDM 2008. IEEE International, San Francisco, CA, USA, 2008.
- Electron Devices Meeting, 2008. IEDM 2008. IEEE International, San Francisco, CA, USA, 2008
- Meric, I.¹ Baklitskaya, N.² Kim, P.³ Shepard, K.L.⁴

4
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- High-frequency, scaled graphene transistors on diamond-like carbon
- Apr 7
- Y. Wu, Y.-M. Lin, A. A. Bol, K. A. Jenkins, F. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, "High-frequency, scaled graphene transistors on diamond-like carbon," Nature, vol. 472, pp. 74- 8, Apr 7 2011.
- (2011) Nature , vol.472 , pp. 74-78
- Wu, Y.¹ Lin, Y.-M.² Bol, A.A.³ Jenkins, K.A.⁴ Xia, F.⁵ Farmer, D.B.⁶ Zhu, Y.⁷ Avouris, P.⁸

5
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- Boron nitride substrates for high quality graphene electronics
- Aug 22
- C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, "Boron nitride substrates for high quality graphene electronics," Nature Nanotechnology, vol. 5, pp. 722-726, Aug 22 2010.
- (2010) Nature Nanotechnology , vol.5 , pp. 722-726
- Dean, C.R.¹ Young, A.F.² Meric, I.³ Lee, C.⁴ Wang, L.⁵ Sorgenfrei, S.⁶ Watanabe, K.⁷ Taniguchi, T.⁸ Kim, P.⁹ Shepard, K.L.¹⁰ Hone, J.¹¹

6
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- Graphene field-effect transistors based on boron nitride gate dielectrics
- presented at the
- I. Meric, C. Dean, A. Young, I. Hone, P. Kim, and K. L. Shepard, "Graphene field-effect transistors based on boron nitride gate dielectrics," presented at the Electron Devices Meeting (IEDM), 2010 IEEE International, 2010., pp. 23.2.1-23.2.4.
- Electron Devices Meeting (IEDM), 2010 IEEE International, 2010
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.