RF performance of top-gated, zero-bandgap graphene field-effect transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Meric, Inanc ^a   Baklitskaya, Natalia ^a   Kim, Philip ^a   Shepard, Kenneth L ^a  

^a Department of Earth and Environmental Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; BAND GAPS; GRAPHENE; HIGH-FREQUENCY MEASUREMENTS; MEASUREMENT AND ANALYSIS; ON CURRENTS; RF PERFORMANCE; VELOCITY SATURATIONS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 64549111675     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796738     Document Type: Conference Paper

References (5)

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3. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated gra-phene field-effect transistors," Nature Nanotechnology, 2008. DOI:10.1038/nnano.2008. 268
4. K. S. Novoselov, et al., "Electric Field Effect in Atomically Thin Carbon Films," Science, vol. 306, pp. 666-669, 2004.
5. J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, "Intrinsic and extrinsic performance limits of graphene devices on SiO2," Nat Nanotechnology, vol. 3, pp. 206-209, 2008.