A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 11, 2003, Pages 2165-2174

  Liang, Qingqing ^a   Cressler, John D ^b   Niu, Guofu ^b   Lu, Yuan ^a   Freeman, Greg ^c   Ahlgren, David C ^c   Malladi, Ramana M ^c   Newton, Kim ^c   Harame, David L ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Deembedding; Noise; Noise correlation matrix; Parasitics; S parameters; SiGe HBT; Y parameters

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CORRELATION METHODS; INTEGRATED CIRCUIT LAYOUT; SCATTERING PARAMETERS;

ELECTROMAGNETIC SIMULATIONS; FOUR-PORT PARASITIC DEEMBEDDING; FOUR-PORT SYSTEM; NOISE CORRELATION MATRIX;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0242468144     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.818580     Document Type: Article

References (13)

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