Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 525-529

  Taniguchi, T ^a   Watanabe, K ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A1. Impurities; A2. Growth from High temperature solutions; A2. High pressure crystal growth; B1. Boron nitride; B2. Semiconducting III V materials; B2. Ultraviolet light luminescence

Indexed keywords

BORON NITRIDE; CATHODOLUMINESCENCE; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTAL IMPURITIES; HIGH PRESSURE EFFECTS; OPTICAL PROPERTIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION;

HEXAGONAL BORON NITRIDE (HBN); HIGH TEMPERATURE SOLUTIONS; ULTRAVIOLET LIGHT LUMINESCENCE;

SINGLE CRYSTALS;

EID: 34247231605     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.061     Document Type: Article

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