BN/Graphene/BN transistors for RF applications

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1209-1211

  Wang, Han ^a   Taychatanapat, Thiti ^a   Hsu, Allen ^a   Watanabe, Kenji ^b   Taniguchi, Takashi ^b   Jarillo Herrero, Pablo ^a   Palacios, Tomas ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Graphene field effect transistors (GFETs); hexagonal boron nitride (hBN); radio frequency (RF)

Indexed keywords

CARRIER VELOCITY; DEVICE STRUCTURES; HEXAGONAL BORON NITRIDE (H-BN); HIGH FREQUENCY HF; HIGH MOBILITY; RADIO FREQUENCY (RF); RF APPLICATIONS; RF ELECTRONICS;

BORON; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; NITRIDES; TRANSISTORS;

CARRIER MOBILITY;

EID: 80052023775     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160611     Document Type: Article

References (17)

1. K. S. Novoselov et al., "Electric field effect in atomically thin carbon films," Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004.
2. A. K. Geim, "Graphene: Status and prospects," Science, vol. 324, no. 5934, pp. 1530-1534, Jun. 2009.
3. K. I. Bolotin et al., "Temperature-dependent transport in suspended graphene," Phys. Rev. Lett., vol. 101, no. 9, p. 096 802, Aug. 2008.
4. H. Wang, D. Nezich, J. Kong, and T. Palacios, "Graphene frequency multipliers," IEEE Electron Device Lett., vol. ED-30, no. 5, pp. 547-549, May 2009.
5. H. Wang, A. Hsu, J. Wu, J. Kong, and T. Palacios, "Graphene-based ambipolar RF mixers," IEEE Electron Device Lett., vol. 31, no. 9, pp. 906-908, Sep. 2010.
6. Y. Lin et al., "100-GHz transistors from wafer-scale epitaxial graphene," Science, vol. 327, no. 5966, p. 662, Feb. 2010.
7. L. Liao et al., "High-speed graphene transistors with a self-aligned nanowire gate," Nature, vol. 467, no. 7313, pp. 305-308, Sep. 2010.
8. C. Berger et al., "Electronic confinement and coherence in patterned epitaxial graphene," Science, vol. 312, no. 5777, pp. 1191-1196, May 2006.
9. C. R. Dean et al., "Boron nitride substrates for high-quality graphene electronics," Nature Nanotechnol., vol. 5, no. 10, pp. 722-726, Aug. 2010.
10. J. Xue et al., "Scanning tunnelling microscopy and spectroscopy of ultraflat graphene on hexagonal boron nitride," Nat. Mater., vol. 10, no. 4, pp. 282-285, Apr. 2011.
11. A. S. Mayorov et al., "Micrometer-scale ballistic transport in encapsulated graphene at room temperature," Nano Lett., vol. 11, no. 6, pp. 2396-2399, Jun. 2011.
12. H. Wang, A. Hsu, J. Kong, D. A. Antoniadis, and T. Palacios, "Compact virtual-source current-voltage model for top-and back-gated graphene field-effect transistors," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1523-1533, May 2011.
13. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," in Proc. Bipolar Circuits Technol. Meeting, 1991, pp. 188-191.
14. Y. M. Lin et al., "Dual-gate graphene FETs with fT of 50 GHz," IEEE Electron Device Lett., vol. 31, no. 1, pp. 68-70, Jan. 2010.
15. T. Taychatanapat and P. Jarillo-Herrero, "Electronic transport in dualgated bilayer graphene at large displacement fields," Phy. Rev. Lett., vol. 105, no. 16, p. 166 601, Oct. 2010.
16. X. Li et al., "Large-area synthesis of high-quality and uniform graphene films on copper foils," Science, vol. 324, no. 5932, pp. 1312-1314, 2009.
17. L. Song et al., "Large scale growth and characterization of atomic hexagonal boron nitride layers," Nano Lett., vol. 10, no. 8, pp. 3209-3215, 2010.