Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements

Nano Letters

Volumn 11, Issue 3, 2011, Pages 1093-1097

  Meric, Inanc ^a   Dean, Cory R ^a   Young, Andrea F ^a   Baklitskaya, Natalia ^a   Tremblay, Noah J ^b,c   Nuckolls, Colin ^b   Kim, Philip ^a   Shepard, Kenneth L ^a  

^a Columbia University ^*  (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c Johns Hopkins University   (United States)

Author keywords

current saturation; Graphene; high bias; pulsed IV; short channel

Indexed keywords

A-DENSITY; CHANNEL LENGTH; CURRENT SATURATION; DIFFUSIVE TRANSPORT; DUAL CHANNEL; GRAPHENE TRANSISTORS; HIGH FIELD TRANSPORT; HIGH-BIAS; OPTICAL PHONON EMISSION; OUTPUT CONDUCTANCE; POWER GAINS; PULSED CURRENT-VOLTAGE MEASUREMENT; PULSED MEASUREMENTS; PULSED-IV; SATURATION VELOCITY; SHORT CHANNEL; SHORT CHANNELS; TRAPPED CHARGE; VELOCITY SATURATION;

BIAS VOLTAGE; DIELECTRIC FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; OXIDE FILMS; VOLTAGE MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 79952590276     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103993z     Document Type: Article

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