Physical and electrical attributes of sintered Ag80-Al 20 high temperature die attach material with different organic additives content

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 2, 2013, Pages 720-733

  Manikam, Vemal Raja ^a   Razak, Khairunisak Abdul ^a   Cheong, Kuan Yew ^a  

^a SCHOOL OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; BINARY ALLOYS; DIES; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; MORPHOLOGY; SILVER ALLOYS; SINTERING; SOLAR ENERGY; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; URANIUM ALLOYS;

DIE-ATTACH MATERIALS; ELECTRICAL CONDUCTIVITY; ELECTRICAL PERFORMANCE; HIGH-TEMPERATURE DIE-ATTACH; OPERATIONAL TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SINTERING TEMPERATURES; TEMPERATURE RATIO;

ALUMINUM ALLOYS;

EID: 84878543592     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-0801-y     Document Type: Article

References (70)

1. V.R. Manikam, K.Y. Cheong, IEEE Trans. Compon. Packag. Technol. 1, 457 (2011)
2. H.S. Chin, K.Y. Cheong, A.B. Ismail, Met. Mat. Trans. B 41, 824 (2010)
3. M.R. Werner, W.R. Fahrner, IEEE Trans. Ind. Electron. 48, 249-257 (2001)
4. C.M. Johnson, N.G. Wright, M.J. Uren, K.I Hilton, M. Rahimo, D.A. Hinchley, A.P. Knights, D.J. Morrison, A.B. Horsfall, S. Ortolland, A.G. O'Neill, IEEE Proc. Circ. Dev. Syst. 148, 101-108 (2001)
5. P. Friedrichs, H. Mitlehner, R. Kaltschmidt, U. Weinert, W. Bartsch, C. Hecht, K.O. Dohnke, B. Weis, D. Stephani, Mater. Sci. Forum 338, 1243 (2000)
6. R. Kisiel, Z. Szczepanski, Microelectron. Rel. 49, 627 (2009)
7. K. Suganuma, Lead free soldering in electronics: science, technology, and environmental impact (Marcel Dekker, New York, 2004)
8. W.J. Plumbridge, R.J. Matela, A. Westwater, Structural integrity and reliability in electronics enhancing performance in a lead-free environment (Springer, Netherlands, 2004)
9. M. Abtew, G. Selvaduray, Mater. Sci. Eng. R 27, 95 (2000)
10. V. Krishnamurthy, K. Paik, D. Lester, Proc. ISHM 719 (1992)
11. S.J. Kim, K.S. Kim, S.S. Kim, K. Suganuma, J. Electron. Mater. 38, 266 (2009)
12. J.E. Lee, K.S. Kim, K. Suganuma, M. Inoue, G. Izuta, Mater. Trans. 48, 584 (2007)
13. S.H. Wang, T.S. Chin, C.F. Yang, S.W. Chen, C.T. Chuang, J. Alloys Compd. 497, 428 (2010)
14. M.N. Islam, Y.C. Chan, M.J. Rizvi, W. Jillek, J. Alloys Compd. 400, 136 (2005)
15. J.N. Lalena, N.F. Dean, M.W. Weiser, Proc. Honeywell Electron. Mater. 131th Annu. TMS Meet Exhibit. 1, 1-18 (2002)
16. Z. Zhang, G.Q. Lu, IEEE Trans. Electron. Packag. Manuf. 25, 279 (2002)
17. K. Meyyappan, P. McCluskey, L.Y. Chen, IEEE Trans. Device Mater. Rel. 3, 152 (2003)
18. Y.V. Naidich, V. Zhuravlev, N. Krasovskaya, Mater. Sci. Eng. A 245, 293 (1998)
19. K. Suganuma, S.J. Kim, K.S. Kim, J. Minerals Metals Mat. Soc. 61, 64 (2009)
20. P. Hagler, P. Henson, R.W. Johnson, IEEE Trans. Ind. Electron. 58, 2673 (2011)
21. V. Chidambaram, J. Hald, J. Hattel, J. Alloys Compd. 490, 170 (2010)
22. C.L. Chin, Y.W. Chen, G. Matijasevic, IEEE Trans. Compon. Hybrids Manuf. Technol. 16, 311 (1993)
23. J.Z. Shi, X.M. Xie, F. Stubhan, J. Freytag, J. Electron. Packag. 122, 168 (2000)
24. J.G. Bai, J. Yin, Z.Z. Zhang, G.Q. Lu, J.D. van Wyk, IEEE Trans. Adv. Packag. 30, 506 (2007)
25. J.G. Bai, Z.Z. Zhang, J.N. Calata, G.Q. Lu, IEEE Trans. Compon. Packag. Technol. 29, 589 (2006)
26. J.G. Bai, T.G. Lei, J.N. Calata, G.Q. Lu, IEEE Trans. Electron. Packag. Manuf. 30, 241 (2007)
27. G.Q. Lu, J.N. Calata, G. Leia, X. Chen, Proc. 8th Int. Conf. Therm. Mech. Multiphys. Sim. Exp. Micro-Electron. Micro-Syst. 1-5 (2007)
28. G.Q. Lu, J.N. Calata, Z. Zhang, J.G. Bai, Proc. 6th IEEE CPMT Conf. HDP, 42-46 (2004)
29. D. Wakuda, M. Hatamura, K. Suganuma, Chem. Phys. Lett. 441, 305 (2007)
30. D. Wakuda, K.S. Kim, K. Suganuma, Scr. Mater. 59, 649 (2008)
31. G.P. Zhigal'skii, B.K. Jones, The physical properties of thin metal films (Taylor and Francis, N.Y., 2003)
32. J.G. Bai, T.G. Lei, J.N. Calata, G.Q. Lu, J. Mater. Res. 22, 3494 (2007)
33. P. Powen, C. Carry, Powder Tech. 128, 248 (2000)
34. J.R. Groza, A. Zavaliangos, Rev. Adv. Mater. Sci. 5, 24 (2003)
35. J.R. Groza, Nanostr. Mater. 12, 987 (1999)
36. K.S. Siow, J. Alloys Compd. 514, 6 (2012)
37. X. Cao, T. Wang, K.D.T. Ngo, G.Q. Lu, IEEE Trans. Electron. Packag. Manuf. Technol. 1, 495 (2011)
38. K. Pashayi, H.R. Fard, F. Lai, S. Iruvanti, J. Plawsky, T.B. Tasciuc, J. Appl. Phys. 111, 104310 (2012)
39. M. Kearns, Mater. Sci. Eng. A 375, 120 (2004)
40. V.R. Manikam, K.A. Razak, K.Y. Cheong, IEEE Trans. Compon. Packag. Technol. (2011) (accepted)
41. K.S. Kim, Y. Kim, S.B. Jung, Nanoscale Res. Lett. 7, 49 (2012)
42. S.Y. Hu, Y.C. Lee, J.W. Lee, J.C. Huang, J.L. Shen, W. Water, Appl. Surf. Sci. 254, 1578 (2008)
43. G.R. Jones, M. Jackson, K. O'Grady, J. Magn. Magn. Mater. 193, 75 (1999)
44. A. Dias, V.T.L. Buono, J.M.C. Vilela, M.S. Andrade, T.M. Lima, J. Mater. Sci. 32, 4715 (1997)
45. H. Irzaman, H. Darmasetiawan, H. Hardhienata, M. Hikam, P. Arifin, S.N. Jusoh, S. Taking, Z. Jamal, M.A. Idris, Atom Indonesia 35, 57 (2009)
46. B. Rellinghaus, S. Stappert, E.F. Wassermann, H. Sauer, B. Spliethoff, Eur. Phys. J. D. 16, 249 (2001)
47. H. Wang, L. Huang, Z. Xu, C. Xu, R.J. Composto, Scholarly commons Dept. papers, University of Pennsylvania (2008)
48. T. Noda, T. Mano, N. Koguchi, Appl. Surf. Sci. 252, 5408 (2006)
49. J. Liu, X. Li, X. Zeng, J. Alloys Compd. 494, 84 (2010)
50. W.D. Callister Jr., Materials science and engineering: an introduction, 5th edn. (Wiley, New York, 2000)
51. V.R. Manikam, K.A. Razak, K.Y. Cheong, J. Electron. Mater. (2012) (under review)
52. I. Yamauchi, T. Kajiwara, T. Mase, M. Saraoka, J. Alloys Compd. 336, 206 (2002)
53. T.R. Northen, H.K. Woo, M.T. Northen, A. Nordström, W. Uritboonthail, K.L. Turner, G. Siuzdak, J. Am. Soc. Mass Spectrum 18, 1945 (2007)
54. K. Lafdi, O. Mesalhy, S. Shaikh, J. Appl. Phys. 102, 083549 (2007)
55. A.C.T. Tang, P.M. Sargent, Electron. Lett. 27, 2018 (1991)
56. H. Jiang, K.S. Moon, C.P. Wong, Electron. Comp. Tech. Conf. 1400-1404 (2008)
57. H. Jiang, K.S. Moon, F. Hua, C.P. Wong, Chem. Mater. 19(4482), 722-727 (2007)
58. C.D. Zou, Y.L. Gao, B. Yang, Q.J. Zhai, Solder. Surf. Mt. Technol. 21, 9 (2009)
59. S.W. Chen, C.C. Lin, C.M. Chen, Met. Mater. Trans. A 29A, 1965 (1998)
60. A. Masson, C. Buttay, H. Morel, C. Raynaud, S. Hascoet, L. Gremillard, Eur. Conf. Power Elec. Appl. (EPE 2011), Birmingham, United Kingdom (2011)
61. C. Buttay, D. Planson, B. Allard, D. Bergogne, P. Bevilacqua, C. Joubert, M. Lazar, C. Martin, H. Morel, D. Tournier, C. Raynaud, Mater. Sci. Eng. B 176, 283 (2009)
62. L. Coppola, D. Huff, F. Wang, R. Burgos, D. Boroyevich, Power Elec. Specialists Conf., (PESC 2007), 2234, 17-21 June 2007
63. R.M. German, Sintering theory and practice (Wiley, New York, 1996), pp. 68-221
64. J.K. Mackenzie, R. Shuttleworth, Proc. Phys. Soc. 62, 833 (1949)
65. Y.C. Lee, J.H. Ahn, K.S. Kim, J.W. Yoon, J.W. Kim, Y. Kim, S.B. Jung, J. Nanosci. Nanotechnol. 11, 5915 (2011)
66. Y.C. Lee, K.S. Kim, J.W. Kim, J.M. Kim, W. Nah, S.H. Lee, S.B. Jung, J. Nanosci. Nanotechnol. 11, 1468 (2011)
67. B. Yan, J. P. You, N. T. Nguyen, Y. He, G. S. Frank, IEEE Trans. Compon. Packag. Technol. 33, 722-727 (2010)
68. K. Qi, X. Chen, G.Q. Lu, Solder. Surf. Mt. Technol. 20, 8 (2008)
69. I.J. Rasiah, C. Breach, Int. Symp. Elec. Mater. Packag., Hong Kong, China (2000)
70. I.J. Rasiah, W.S. Leong, EPTC, Singapore, 291 (1998)