-
1
-
-
0000195564
-
-
R. R. Tummala, E. J. Rymaszewksi, and A. G. Klopfenstein, Eds. New York: Chapman and Hall
-
R. R. Tummala, P. Garrou, T. K. Gupta, N. Kuramoto, K. Niwa, Y. Shimada, and M. Terasawa, Microelectronics Packaging Handbook: Semi-conductor Packaging, Part II, R. R. Tummala, E. J. Rymaszewksi, and A. G. Klopfenstein, Eds. New York: Chapman and Hall, 1997, pp. 285-293.
-
(1997)
Microelectronics Packaging Handbook: Semi-Conductor Packaging, Part II
, pp. 285-293
-
-
Tummala, R.R.1
Garrou, P.2
Gupta, T.K.3
Kuramoto, N.4
Niwa, K.5
Shimada, Y.6
Terasawa, M.7
-
2
-
-
0038426995
-
"High-temperature electronics - A role for wide bandgap semiconductors?"
-
Jun
-
P. G. Neudeck, R. S. Okojie, and L. Y. Chen, "High-temperature electronics - A role for wide bandgap semiconductors?," Proc. IEEE, vol. 90, no. 6, pp. 1065-1076, Jun. 2002.
-
(2002)
Proc. IEEE
, vol.90
, Issue.6
, pp. 1065-1076
-
-
Neudeck, P.G.1
Okojie, R.S.2
Chen, L.Y.3
-
3
-
-
33646871860
-
"SiC power-switching devices - The second electronics revolution?"
-
Jun
-
J. A. Cooper and A. Agarwal, "SiC power-switching devices - The second electronics revolution?," Proc. IEEE, vol. 90, no. 6, pp. 956-968, Jun. 2002.
-
(2002)
Proc. IEEE
, vol.90
, Issue.6
, pp. 956-968
-
-
Cooper, J.A.1
Agarwal, A.2
-
4
-
-
8744307224
-
"SiC devices for high voltage high power applications"
-
Y. Sugawara, "SiC devices for high voltage high power applications," Mater. Sci. For., vol. 457-460, pp. 963-968, 2004.
-
(2004)
Mater. Sci. For.
, vol.457-460
, pp. 963-968
-
-
Sugawara, Y.1
-
5
-
-
0035305734
-
"SiC devices for advanced power and high-temperature applications"
-
Apr
-
W. Wondrak, R. Held, E. Niemann, and U. Schmid, "SiC devices for advanced power and high-temperature applications," IEEE Trans. Ind. Electron., vol. 48, no. 2, pp. 307-308, Apr. 2001.
-
(2001)
IEEE Trans. Ind. Electron.
, vol.48
, Issue.2
, pp. 307-308
-
-
Wondrak, W.1
Held, R.2
Niemann, E.3
Schmid, U.4
-
6
-
-
0031250249
-
"GaN based heterostructure for high power devices"
-
M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, "GaN based heterostructure for high power devices," Solid- State Electron., vol. 41, pp. 1555-1559, 1997.
-
(1997)
Solid- State Electron.
, vol.41
, pp. 1555-1559
-
-
Khan, M.A.1
Chen, Q.2
Shur, M.S.3
Dermott, B.T.4
Higgins, J.A.5
Burm, J.6
Schaff, W.J.7
Eastman, L.F.8
-
7
-
-
0026854168
-
"High-power diode-laser arrays"
-
Apr
-
J. G. Endriz, M. Vakili, G. S. Bowder, M. DeVito, J. M. Haden, G. L. Harnagel, W. L. Plano, M. Sakamato, D. F. Welch, S. Willing, D. P. Vorland, and H. C. Yao, "High-power diode-laser arrays," IEEE J. Quantum Electron., vol. 28, no. 4, pp. 952-965, Apr. 1992.
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, Issue.4
, pp. 952-965
-
-
Endriz, J.G.1
Vakili, M.2
Bowder, G.S.3
DeVito, M.4
Haden, J.M.5
Harnagel, G.L.6
Plano, W.L.7
Sakamato, M.8
Welch, D.F.9
Willing, S.10
Vorland, D.P.11
Yao, H.C.12
-
8
-
-
0028433545
-
"Advanced metallization schemes for bonding of InP-based laser devices to CVD-diamond heatsinks"
-
A. Katz, C. H. Lee, and K. L. Tai, "Advanced metallization schemes for bonding of InP-based laser devices to CVD-diamond heatsinks," Mater. Chem. Phys., vol. 37, pp. 303-328, 1994.
-
(1994)
Mater. Chem. Phys.
, vol.37
, pp. 303-328
-
-
Katz, A.1
Lee, C.H.2
Tai, K.L.3
-
9
-
-
0011888788
-
"High-temperature operation of polycrystalline diamond field-effect transistors"
-
Feb
-
A. J. Tessmer, L. S. Plano, and D. L. Dreifus, "High-temperature operation of polycrystalline diamond field-effect transistors," IEEE Electron. Device Lett., vol. 14, no. 2, pp. 66-68, Feb. 1993.
-
(1993)
IEEE Electron. Device Lett.
, vol.14
, Issue.2
, pp. 66-68
-
-
Tessmer, A.J.1
Plano, L.S.2
Dreifus, D.L.3
-
10
-
-
36449009293
-
"Three-dimensional morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu"
-
H. K. Kim, H. K. Liou, and K. N. Tu, "Three-dimensional morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu," Appl. Phys. Lett., vol. 66, pp. 2337-2339, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 2337-2339
-
-
Kim, H.K.1
Liou, H.K.2
Tu, K.N.3
-
11
-
-
0007565710
-
"A study on sintering and microstructure development of fritless silver thick film conductors"
-
S. Rane, V. Puri, and D. Amalnerkar, "A study on sintering and microstructure development of fritless silver thick film conductors," J. Mater. Sci. - Mater. Electron., vol. 11, pp. 667-674, 2000.
-
(2000)
J. Mater. Sci. - Mater. Electron.
, vol.11
, pp. 667-674
-
-
Rane, S.1
Puri, V.2
Amalnerkar, D.3
-
12
-
-
0032206704
-
"Effects of silver-paste formulation on camber development during the cofiring of a silver-based, low-temperature-cofired ceramic package"
-
C. R. Chang and J. H. Jean, "Effects of silver-paste formulation on camber development during the cofiring of a silver-based, low-temperature-cofired ceramic package," J. Amer. Ceramic Soc., vol. 81, pp. 2805-2814, 1998.
-
(1998)
J. Amer. Ceramic Soc.
, vol.81
, pp. 2805-2814
-
-
Chang, C.R.1
Jean, J.H.2
-
13
-
-
0036826433
-
"Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow"
-
Oct
-
Z. Zhang and G. Q. Lu, "Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow," IEEE Trans. Electron. Packag. Manufact., vol. 25, no. 4, pp. 279-283, Oct. 2002.
-
(2002)
IEEE Trans. Electron. Packag. Manufact.
, vol.25
, Issue.4
, pp. 279-283
-
-
Zhang, Z.1
Lu, G.Q.2
-
14
-
-
0036768050
-
"Silver-indium joints produced at low temperature for high temperature devices"
-
Sep
-
R. W. Chuang and C. C. Lee, "Silver-indium joints produced at low temperature for high temperature devices," IEEE Trans. Compon. Packag. Technol., vol. 25, no. 3, pp. 453-458, Sep. 2002.
-
(2002)
IEEE Trans. Compon. Packag. Technol.
, vol.25
, Issue.3
, pp. 453-458
-
-
Chuang, R.W.1
Lee, C.C.2
-
15
-
-
5044227409
-
"Nanostructured bulk solids by field activated sintering"
-
J. R. Groza and A. Zavaliangos, "Nanostructured bulk solids by field activated sintering," Rev. Adv. Mater. Sci., vol. 5, pp. 24-33, 2003.
-
(2003)
Rev. Adv. Mater. Sci.
, vol.5
, pp. 24-33
-
-
Groza, J.R.1
Zavaliangos, A.2
-
16
-
-
0032593868
-
"Nanosintering"
-
J. R. Groza, "Nanosintering," NanoStruct. Mater., vol. 12, pp. 987-992, 1999.
-
(1999)
NanoStruct. Mater.
, vol.12
, pp. 987-992
-
-
Groza, J.R.1
-
17
-
-
11744336762
-
"Flash method of determining thermal diffusivity, heat capacity, and thermal conductivity"
-
W. J. Parker, R. J. Jenkins, C. P. Butler, and G. L. Abbott, "Flash method of determining thermal diffusivity, heat capacity, and thermal conductivity," J. Appl. Phys., vol. 32, pp. 1679-1684, 1961.
-
(1961)
J. Appl. Phys.
, vol.32
, pp. 1679-1684
-
-
Parker, W.J.1
Jenkins, R.J.2
Butler, C.P.3
Abbott, G.L.4
-
18
-
-
2042510741
-
"Effects of detector nonlinearity and specimen size on the apparent thermal-diffusivity of nist-8425 graphite"
-
D. P. H. Hasselman and K. Y. Donaldson, "Effects of detector nonlinearity and specimen size on the apparent thermal-diffusivity of nist-8425 graphite," Int. J. Thermophys., vol. 11, pp. 573-585, 1990.
-
(1990)
Int. J. Thermophys.
, vol.11
, pp. 573-585
-
-
Hasselman, D.P.H.1
Donaldson, K.Y.2
-
19
-
-
0029292098
-
"Constrained-film sintering of a gold circuit paste"
-
J. Choe, J. N. Calata, and G. Q. Lu, "Constrained-film sintering of a gold circuit paste," J. Mater. Res., vol. 10, pp. 986-994, 1995.
-
(1995)
J. Mater. Res.
, vol.10
, pp. 986-994
-
-
Choe, J.1
Calata, J.N.2
Lu, G.Q.3
-
20
-
-
0009914868
-
"Effective elastic properties of porous materials with randomly dispersed pores: Finite deformation"
-
V. A. Levin, V. V. Lokhin, and K. M. Zingerman, "Effective elastic properties of porous materials with randomly dispersed pores: Finite deformation," J. Appl. Mech., vol. 67, pp. 667-670, 2000.
-
(2000)
J. Appl. Mech.
, vol.67
, pp. 667-670
-
-
Levin, V.A.1
Lokhin, V.V.2
Zingerman, K.M.3
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