Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Friedrichs, Peter ^a   Mitlehner, Heinz ^a   Kaltschmidt, Rainer ^a   Weinert, Ulrich ^a   Bartsch, Wolfgang ^a   Hecht, Christian ^a   Dohnke, Karl Otto ^a   Weis, Benno ^b   Stephani, Dietrich ^a  

^a SIEMENS AG   (Germany)

^b A and D SD IT 1 ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

AVALANCHE BREAKDOWNS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0342571640     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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3. R. Rupp, A. Wiedenhofer, P. Friedrichs, D. Peters, R. Schörner, D. Stephani, Materials Science Forum, Vol. 264-268 (1998), pp.89-96.
4. ISE TCAD, DESSIS, Operator's manual
5. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Wien: Springer Verlag 1984
6. M. Ruff, H. Mitlehner, R. Helbig, IEEE Trans. on Electr. Dev., Vol. 41 (1994), No.6, p. 1040
7. H. Mitlehner, W. Bartsch, K. Dohnke, P. Friedrichs, R. Kaltschmidt, U Weinert, B. Weis D Stephani, Proceedings of the ISPSD '99, Toronto, May 26-28, 1999