Die-attachment solutions for SiC power devices

Microelectronics Reliability

Volumn 49, Issue 6, 2009, Pages 627-629

  Kisiel, R ^a   Szczepanski Z ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVE BONDINGS; ASSEMBLY PROCESS; BONDING TECHNOLOGIES; CONDUCTIVE COMPOSITIONS; CONNECTION METHODS; DIE ATTACHMENTS; DIE BONDINGS; HIGH TEMPERATURES; HIGH-POWER; HIGH-POWER ELECTRONICS; LOW TEMPERATURES; LOW-TEMPERATURE SINTERING; NANO-POWDERS; POWER DEVICES; SIC DEVICES; SILVER NANOPARTICLES; SOLDER BONDINGS; WORK FOCUS;

DC GENERATORS; DIES; GERMANIUM; GERMANIUM ALLOYS; HIGH TEMPERATURE APPLICATIONS; OHMIC CONTACTS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON CARBIDE; SILVER; SILVER ALLOYS; SINTERING; TECHNOLOGY;

GLASS BONDING;

EID: 67349103413     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.03.009     Document Type: Article

References (20)

1. Tsuyoshi F., Balda J.C., et al. Power conversion with SiC devices at extremely high ambient temperature. IEEE Trans Power Electron 22 (2007) 1321-1328
2. Kirschman R. High temperature electronics (1999), New York, The Institute of Electrical and Electronics Engineers Inc.
3. Ray B, Spyker L. High temperature design and testing of a DC power converter with Si and SiC devices. In: Proc of 39 IEEE industry applications society annual meeting, Seatle; October 2004. p. 33-5.
4. Slater LA, Lipkin GM, et al. High temperature enhancement-mode NMOS and CMOS devices and circuits in 6H-SiC. In: 53rd Devices research conf; June 1995. p. 100-4.
5. Vanam K, Barlow F, Elshabini A. High temperature SiC packaging for power electronics applications. In: Proc of XXXI conf IMAPS-Poland, Krasiczyn; September 2007. p. 111-7.
6. Borowy B, Casey L, Davis G. HiRel Double sided package for Si/SiC power module. In: 44th Annual international reliability physics symposium, San Jose; 2006. p. 613-4.
7. Johnson R., Palmer M., and Vang C. Packaging materials and approaches for high temperatures SiC power devices. Adv Microelectron 31 1 (2004) 8-11
8. Cappola L, Huff D, et al. Survey on high temperature packaging materials for SiC based power electronics modules. In: IEEE power electronics specialists conference, PESC2007; 17-21 June 2007. p. 2234-9.
9. Mc Cluskey P et al. Reliability of high temperature solder alternatives. In: High temperature electronics conference, HITEC 2006; 2006. p. 225-9.
10. Rogers T. Consideration of anodic bonding of capacitive type silicon-glass sensor fabrication. J Micromech Microeng 2 (1992) 164-169
11. Meyappan K., Mc Cuskey P., and Chen L.Y. Thermomechanical analysis of gold-based SiC die-attach assembly. IEEE Trans Dev Mater Reliab (2003) 152-158
12. Technical Data Sheet EPOTEK P-1011. Rev II, 7/97.
13. Razon E. Silver glass die attach. Hybrid Circ Technol December (1989) 22-28
14. Technical Data Sheet Loctite: Hysol QMJ 3555R; September 2003.
15. Zhang Z. Processing and characterization of micro-scale and nanoscale silver paste for power semiconductor devices attachment. Ph.D. Dissertation, Virginia Tech; 2005.
16. Lu GQ, Calata JN, et al. A lead-free low temperature sintering die attach technique for high temperature packaging. In: IEEE CPMT conf; June 2004. p. 42-6.
17. Guofeng J., Yin J., et al. High temperature operation of SiC power devices by low-temperature sintered silver die-attachment. IEEE Trans Adv Packag 30 (2007) 506-509
18. Rudzki J, Eisele R. Low temperature joining technique for better reliability of power electronics modules. In: Internat conf microterm, Łódz; 2007. p. 159-66.
19. Bai J.G., Calata J.N., and Lu G.-Q. Processing and characterization on nanosilver pastes for die-attaching SiC devices. IEEE Trans Electron Packag Manuf 30 4 (2007) 241-245
20. Szczepanski Z., and Kisiel R. Assembly aspects of SiC devices for high frequency and high power applications. Elektronika XLIX 7-8 (2008) 19-24