-
1
-
-
75449098083
-
Multiphase power converter drive for fault-tolerant machine development in aerospace application
-
Feb.
-
L. de Lillo, L. Empringham, P. W. Wheeler, S. Khwan-On, C. Gerada, M. N. Othman, and X. Huang, "Multiphase power converter drive for fault-tolerant machine development in aerospace application," IEEE Trans. Ind. Electron., vol. 57, no. 2, pp. 575-583, Feb. 2010.
-
(2010)
IEEE Trans. Ind. Electron.
, vol.57
, Issue.2
, pp. 575-583
-
-
De Lillo, L.1
Empringham, L.2
Wheeler, P.W.3
Khwan-On, S.4
Gerada, C.5
Othman, M.N.6
Huang, X.7
-
2
-
-
76849103921
-
Hybrid cascaded H-bridge multilevel-inverter induction-motor-drive direct torque control for automotive application
-
Mar.
-
F. Khoucha, S. M. Lagoun, K. Marouani, A. Kheloui, and M. E. H. Benbouzid, "Hybrid cascaded H-bridge multilevel-inverter induction-motor-drive direct torque control for automotive application," IEEE Trans. Ind. Electron., vol. 57, no. 3, pp. 892-899, Mar. 2010.
-
(2010)
IEEE Trans. Ind. Electron.
, vol.57
, Issue.3
, pp. 892-899
-
-
Khoucha, F.1
Lagoun, S.M.2
Marouani, K.3
Kheloui, A.4
Benbouzid, M.E.H.5
-
3
-
-
75449103140
-
Double-input dc-dc power electronic converters for electric-drive vehicles-Topology exploration and synthesis using a single-pole triple-throw switch
-
Feb.
-
K. Gummi and M. Ferdowsi, "Double-input dc-dc power electronic converters for electric-drive vehicles-Topology exploration and synthesis using a single-pole triple-throw switch," IEEE Trans. Ind. Electron., vol. 57, no. 2, pp. 617-623, Feb. 2010.
-
(2010)
IEEE Trans. Ind. Electron.
, vol.57
, Issue.2
, pp. 617-623
-
-
Gummi, K.1
Ferdowsi, M.2
-
4
-
-
78649323699
-
High temperature electrical characteristics of 20 A, 800 v enhancement mode SiC VFETs
-
Albuquerque, NM, May 12-15
-
A. Rienour, I. Sankin, N. Merrett, W. King, V. Bondarenko, R. Kelly, W. Draper, and D. Sheridan, "High temperature electrical characteristics of 20 A, 800 V enhancement mode SiC VFETs," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 12-15, 2008, pp. 103-108.
-
(2008)
Proc. Int. High Temp. Electron. Conf.
, pp. 103-108
-
-
Rienour, A.1
Sankin, I.2
Merrett, N.3
King, W.4
Bondarenko, V.5
Kelly, R.6
Draper, W.7
Sheridan, D.8
-
5
-
-
65949087955
-
Reliable silicon carbide MOSFET operation at 300 °c junction temperature
-
Albuquerque, NM, May 12-15
-
J. Richmond, B. Hull, S. H. Ryu, A. Agarwal, J. Palmour, and J. Scofield, "Reliable silicon carbide MOSFET operation at 300 °C junction temperature," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 12-15, 2008, pp. 109-112.
-
(2008)
Proc. Int. High Temp. Electron. Conf.
, pp. 109-112
-
-
Richmond, J.1
Hull, B.2
Ryu, S.H.3
Agarwal, A.4
Palmour, J.5
Scofield, J.6
-
6
-
-
79959286771
-
6H-SiC transistor integrated circuits demonstrating prolonged operation at 500 °c
-
Albuquerque, NM, May 12-15
-
P. G. Neudeck, L.-Y. Chen, C. W. Chang, G. M. Beheim, R. Okojie, L. Evans, R. Meredith, T. Ferrier, M. J. Krasowski, and N. F. Prokop, "6H-SiC transistor integrated circuits demonstrating prolonged operation at 500 °C," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 12-15, 2008, pp. 95-102.
-
(2008)
Proc. Int. High Temp. Electron. Conf.
, pp. 95-102
-
-
Neudeck, P.G.1
Chen, L.-Y.2
Chang, C.W.3
Beheim, G.M.4
Okojie, R.5
Evans, L.6
Meredith, R.7
Ferrier, T.8
Krasowski, M.J.9
Prokop, N.F.10
-
7
-
-
79959301612
-
General purpose 256 KBIT non-volatile memory for operation to 250 °c
-
Albuquerque, NM, May 12-15
-
B. Ohme and T. B. Lucking, "General purpose 256 KBIT non-volatile memory for operation to 250 °C," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 12-15, 2008, pp. 143-149.
-
(2008)
Proc. Int. High Temp. Electron. Conf.
, pp. 143-149
-
-
Ohme, B.1
Lucking, T.B.2
-
8
-
-
79959324981
-
Test results of the HTADC12 12 bit analog to digital converter for 250 °c
-
Oxford, U.K., Sep. 13-16
-
T. J. Romanko and M. R. Larson, "Test results of the HTADC12 12 bit analog to digital converter for 250 °C," in Proc. IMAPS High Temp. Electron. Netw. Conf., Oxford, U.K., Sep. 13-16, 2009, pp. 44-48.
-
(2009)
Proc. IMAPS High Temp. Electron. Netw. Conf.
, pp. 44-48
-
-
Romanko, T.J.1
Larson, M.R.2
-
9
-
-
79959323771
-
Study of gate SOI nMOSFET devices at high temperature
-
Albuquerque, NM, May 12-15
-
L. Mendes and M. Bellodi, "Study of gate SOI nMOSFET devices at high temperature," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 12-15, 2008, pp. 17-24.
-
(2008)
Proc. Int. High Temp. Electron. Conf.
, pp. 17-24
-
-
Mendes, L.1
Bellodi, M.2
-
10
-
-
79959308354
-
High temperature SOI CMOS low power circuits for MEMS co-integrated interfaces
-
Oxford, U.K., Sep. 13-16
-
B. Rue, B. Olbrechts, N. Andre, J.-P. Raskin, and D. Flandre, "High temperature SOI CMOS low power circuits for MEMS co-integrated interfaces," in Proc. IMAPS High Temp. Electron. Netw. Conf., Oxford, U.K., Sep. 13-16, 2009, pp. 121-125.
-
(2009)
Proc. IMAPS High Temp. Electron. Netw. Conf.
, pp. 121-125
-
-
Rue, B.1
Olbrechts, B.2
Andre, N.3
Raskin, J.-P.4
Flandre, D.5
-
11
-
-
79959311881
-
Development of an integrated power controller based on SOI and SiC
-
Oxford, U.K., Sep. 13-16
-
J. A. Henfling, S. Atcitty, F. Maldonado, R. Norman, N. Summers, and T. Thornton, "Development of an integrated power controller based on SOI and SiC," in Proc. IMAPS High Temp. Electron. Netw. Conf., Oxford, U.K., Sep. 13-16, 2009, pp. 96-103.
-
(2009)
Proc. IMAPS High Temp. Electron. Netw. Conf.
, pp. 96-103
-
-
Henfling, J.A.1
Atcitty, S.2
Maldonado, F.3
Norman, R.4
Summers, N.5
Thornton, T.6
-
12
-
-
34547132070
-
Power device packaging technologies for extreme environments
-
DOI 10.1109/TEPM.2007.899158
-
R. W. Johnson, C. Wang, Y. Liu, and J. D. Scofield, "Power device packaging technologies for extreme environments," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 3, pp. 182-193, Jul. 2007. (Pubitemid 47098802)
-
(2007)
IEEE Transactions on Electronics Packaging Manufacturing
, vol.30
, Issue.3
, pp. 182-193
-
-
Johnson, R.W.1
Wang, C.2
Liu, Y.3
Scofield, J.D.4
-
13
-
-
79959291907
-
Design considerations for high temperature hybrid manufacturability
-
Albuquerque, NM, May 12-15
-
M. Watts, "Design considerations for high temperature hybrid manufacturability," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 12-15, 2008, pp. 279-286.
-
(2008)
Proc. Int. High Temp. Electron. Conf.
, pp. 279-286
-
-
Watts, M.1
-
15
-
-
0041328285
-
Continued study in power module substrates for automotive harsh environments
-
Denver, CO, Apr. 7-9
-
K. Easler, "Continued study in power module substrates for automotive harsh environments," in Proc. Ceramic Interconnect Technol. Conf., Denver, CO, Apr. 7-9, 2003, pp. 69-72.
-
(2003)
Proc. Ceramic Interconnect Technol. Conf.
, pp. 69-72
-
-
Easler, K.1
-
16
-
-
79959316985
-
Thick film modules for 300 °c applications
-
Santa Fe, NM, May 16-18
-
M. J. Palmer and R. W. Johnson, "Thick film modules for 300 °C applications," in Proc. Int. High Temp. Electron. Conf., Santa Fe, NM, May 16-18, 2006, pp. 118-124.
-
(2006)
Proc. Int. High Temp. Electron. Conf.
, pp. 118-124
-
-
Palmer, M.J.1
Johnson, R.W.2
-
17
-
-
0016884471
-
Die Zustandsdiagramme Silber-Gemanium-Silizium Und Gold-Germanium-Silzium
-
B. Predel, H. Bankstahl, and T. Godecke, "Die Zustandsdiagramme Silber-Gemanium-Silizium Und Gold-Germanium-Silzium," J. Less- Common Metals, vol. 44, pp. 39-49, 1976.
-
(1976)
J. Less- Common Metals
, vol.44
, pp. 39-49
-
-
Predel, B.1
Bankstahl, H.2
Godecke, T.3
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