Thermomechanical analysis of gold-based SiC die-attach assembly

IEEE Transactions on Device and Materials Reliability

Volumn 3, Issue 4, 2003, Pages 152-158

  Meyyappan, Karumbu ^a   McCluskey, Patrick ^a   Chen, Liangyu ^a,b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIES; ELECTRONICS PACKAGING; FATIGUE OF MATERIALS; FINITE ELEMENT METHOD; GOLD; OPTIMIZATION; POROSITY; SENSORS; SILICON CARBIDE; STRESS ANALYSIS; THERMAL EXPANSION; THERMOMECHANICAL TREATMENT;

COEFFICIENT OF THERMAL EXPANSION (CTE); FATIGUE RESISTANCE; PRESSURE SENSORS;

MICROELECTROMECHANICAL DEVICES;

EID: 3042762894     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2003.821538     Document Type: Article

References (4)

1. F. P. McCluskey, R. R. Grzybowski, and T. F. Podlesak, High Temperature Electronics, Boca Raton, FL: CRC Press, 1996.
2. P. McCluskey and L. Y. Chen, "Microsystem packaging for high temperature applications," MST (Microsystems) News, pp. 41-42, 2001.
3. L. Y. Chen, G. W. Hunter, and P. G. Neudeck, "Silicon carbide die-attach scheme for 500°C operation," in Wide-Bandgap Electronic Devices Symp. (Materials Research Soc. Symp.) Proc., vol. 622, San Francisco, CA, 2001, pp. T8.10.1-6.
4. S.-T Lin and L-Y. Chen, "Thermomechanical optimization of a gold thick-film based die-attach assembly using finite element analysis," in Proc. 6th Int. High Temperature Electronics Conf., Albuquerque, NM, June 2002. On CD-ROM.