High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment

IEEE Transactions on Advanced Packaging

Volumn 30, Issue 3, 2007, Pages 506-510

  Bai, John Goufeng ^a,b   Yin, Jian ^a   Zhang, Zhiye ^a   Lu, Guo Quan ^a   van Wyk, Jacobus Daniel ^a  

^a State University   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

Author keywords

Die attachment; High temperature electronics; Low temperature sintering; Nanoscale silver paste

Indexed keywords

HIGH TEMPERATURE OPERATIONS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILVER; SINTERING; TRANSISTORS;

DIE-ATTACH METHOD; LOW-TEMPERATURE SINTERING TECHNOLOGY; NANOSCALE SILVER PASTE;

ELECTRONICS PACKAGING;

EID: 34548175460     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2007.898628     Document Type: Article

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