SCOPUS 정보 검색 플랫폼

Volumn 23, Issue 20, 2013, Pages 2592-2616

Domain wall conduction and polarization-mediated transport in ferroelectrics

(10) Vasudevan, Rama K a Wu, Weida b Guest, Jeffrey R c Baddorf, Arthur P f Morozovska, Anna N d Eliseev, Eugene A e Balke, Nina f Nagarajan, V a Maksymovych, Peter f Kalinin, Sergei V f

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b RUTGERS UNIVERSITY (United States)

c ARGONNE NATIONAL LABORATORY (United States)

d INSTITUTE OF PHYSICS (Ukraine)

e FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE (Ukraine)

f OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

domain wall conduction; ferroelectric; Landau Ginzburg Devonshire theory; memristive systems; thin film

Indexed keywords

ENGINEERED INTERFACES; FUNCTIONAL PROPERTIES; IMPROPER FERROELECTRICS; INTERFACE CONDUCTIVITY; LANDAU-GINZBURG-DEVONSHIRE THEORY; MEMRISTIVE SYSTEMS; MICROSTRUCTURAL FEATURES; WALL CONDUCTION;

DEFECTS; DOMAIN WALLS; MEMRISTORS; MICROSTRUCTURAL EVOLUTION; NANOTECHNOLOGY; POLARIZATION; SCANNING PROBE MICROSCOPY; THIN FILMS; TOPOLOGY;

FERROELECTRIC MATERIALS;

EID: 84877823360 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201300085 Document Type: Article

Times cited : (133)

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