Theoretical current-voltage characteristics of ferroelectric tunnel junctions

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 12, 2005, Pages

  Kohlstedt, H ^a,d   Pertsev, N A ^a,b   Rodriguez Contreras J ^a   Waser, R ^a,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744452857     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.125341     Document Type: Article

References (64)

1. J. Frenkel, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.36.1604 36, 1604 (1930).
2. A. Sommerfeld and H. Bethe, Handbuch der Physik (Springer, Berlin, 1933), Vol. XXIV, p. 450.
3. R. Holm and W. Meissner, Z. Phys. ZEPYAA 0044-3328 74, 715 (1932).
4. C. B. Duke, in Solid State Physics, edited by, F. Seitz,,, D. Turnbull,, and, H. Ehrenreich, (Academic Press, New York, 1969), Vol. 10.
5. Tunneling Phenomena in Solids, edited by, E. Burstein, and, S. Lundqvist, (Plenum Press, New York, 1969).
6. E. L. Wolf, Principles of Tunneling Spectroscopy (Plenum, New York, 1985).
7. K. K. Likharev and V. K. Semenov, IEEE Trans. Appl. Supercond. ITASE9 1051-8223 10.1109/77.80745 1, 3 (1991).
8. J.-M. Slaughter, M. DeHerrera, and H. Dürr, in Nanoelectronics and Information Technology, Advanced Electronic Materials and Novel Devices, edited by, R. Waser, (Wiley-VCH, New York, 2003), Chap., p. 591.
9. Y. Lu, X. W. Li, G. Q. Gong, G. Xiao, A. Gupta, P. Lecoeur, J. Z. Sun, Y. Y. Wang, and V. P. David, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54. R8357 54, R8357 (1996);
10. J. Z. Sun, L. Krusin-Elbaum, P. R. Duncombe, A. Gupta, and R. B. Laibowitz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118651 70, 1769 (1997);
11. J. Z. Sun, Philos. Trans. R. Soc. London PTRMAD 0962-8428 356, 1623 (1998).
12. M.-H. Jo, N. D. Mathur, N. K. Todd, and M. G. Blamire, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.R14905 61, R14905 (2000).
13. D. C. Worledge and T. H. Geballe, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.85.5182 85, 5182 (2000).
14. J. Valasek, Phys. Rev. PHRVAO 0031-899X 15, 537 (1920).
15. L. Esaki, R. B. Laibowitz, and P. J. Stiles, IBM Tech. Discl. Bull. IBMTAA 13, 2161 (1971);
16. L. L. Chang and L. Esaki, IBM Tech. Discl. Bull. IBMTAA 14, 1250 (1971).
17. R. Wolf, P. W. M. Blom, and M. P. C. Krijn, Tunnel Diode with Several Permanent Switching States, U.S. Patent No. 5,541,422, July 30, 1996.
18. J. Scott, Ferroelectr. Rev. FEREFH 1025-580X 1, 1 (1998).
19. I. Stolichnov, A. K. Tagantsev, E. L. Colla, and N. Setter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122374 73, 1361 (1998).
20. Y. Watanabe, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.R5563 57, R5563 (1998).
21. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, C. Parks, J. Lian, H. Xu, and Q. Y. Ma, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1339207 89, 2873 (2001).
22. H. Kohlstedt, N. A. Pertsev, and R. Waser, in Ferroelectric Thin Films X, edited by, S. R. Gilbert,,, Y. Miyasaka,,, D. Wouters,,, S. Trolier-McKinstry,, and, S. K. Streiffer,, MRS Symposia Proceedings No. 688 (Materials Research Society, Pittsburg, 2002), p. 161.
23. H. Qu, W. Yao, T. Garcia, J. Zhang, A. V. Sorokin, S. Ducharme, P. A. Dowben, and V. M. Fridkin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1582366 82, 4322 (2003).
24. J. Rodríguez Contreras, H. Kohlstedt, U. Poppe, R. Waser, C. Buchal, and N. A. Pertsev, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1627944 83, 4595 (2003).
25. I. P. Batra and B. D. Silverman, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(99)00328-2 11, 291 (1972).
26. I. P. Batra, P. Würfel, and B. D. Silverman, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.30.384 30, 384 (1973).
27. T. Tybell, C. H. Ahn, and J.-M. Triscone, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124536 75, 856 (1999).
28. S. K. Streiffer, J. A. Eastman, D. D. Fong, C. Thompson, A. Munkholm, M. V. Ramana Murty, O. Auciello, G. R. Bai, and G. B. Stephenson, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.89.067601 89, 067601 (2002);
29. D. D. Fong, G. B. Stephenson, S. K. Streiffer, J. A. Eastman, O. Auciello, P. H. Fuoss, and C. Thompson, Science SCIEAS 0036-8075 10.1126/science.1098252 304, 1650 (2004).
30. Ph. Ghosez and K. M. Rabe, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126469 76, 2767 (2000).
31. B. Meyer and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.205426 63, 205426 (2001).
32. A. G. Zembilgotov, N. A. Pertsev, H. Kohlstedt, and R. Waser, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1427406 91, 2247 (2002).
33. J. Junquera and Ph. Ghosez, Nature (London) NATUAS 0028-0836 10.1038/nature01501 422, 506 (2003).
34. C. H. Ahn, K. M. Rabe, and J.-M. Triscone, Science SCIEAS 0036-8075 10.1126/science.1092508 303, 488 (2004).
35. A. V. Bune, V. M. Fridkin, S. Ducharme, L. M. Blinov, S. P. Palto, A. V. Sorokin, S. G. Yudin, and A. Zlatkin, Nature (London) NATUAS 0028-0836 10.1038/36069 391, 874 (1998).
36. S. Ducharme, V. M. Fridkin, A. V. Bune, S. P. Palto, L. M. Blinov, N. N. Petukhova, and S. G. Yudin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.175 84, 175 (2000).
37. K. Lefki and G. J. M. Dormans, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.357693 76, 1764 (1994).
38. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York, 1974).
39. V. L. Bonch-Bruevich and S. G. Kalashnikov, Halbleiterphysik (Deutscher Verlag der Wissenschaften, 1982).
40. J. G. Simmons, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1702682 34, 1793 (1963).
41. W. F. Brinkman, R. C. Dynes, and J. M. Rowell, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1659141 41, 1915 (1970).
42. D. H. Chen, K. R. Udayakumar, C. J. Gaskey, and L. E. Cross, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.115263 67, 3411 (1995).
43. M. Kumagai, S. L. Chuang, and H. Ando, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.15303 57, 15303 (1998).
44. S. N. Grinyaev and A. N. Razzhuvalov, Phys. Solid State PSOSED 1063-7834 10.1134/1.1356136 43, 549 (2001).
45. F. Jona and G. Shirane, Ferroelectric Crystals (MacMillan, New York, 1962).
46. A. K. Tagantsev, Ferroelectrics FEROA8 0015-0193 184, 79 (1996).
47. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
48. N. A. Pertsev, J. Rodríguez Contreras, V. G. Kukhar, B. Hermanns, H. Kohlstedt, and R. Waser, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1621731 83, 3356 (2003).
49. M. E. Caspari and W. J. Merz, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.80.1082 80, 1082 (1950).
50. D. R. Tilley and B. Žekš, Ferroelectrics FEROA8 0015-0193 134, 313 (1992).
51. Y. Watanabe, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.11257 59, 11257 (1999);
52. M. Singh, J. Singh, and U. Mishra, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1434542 91, 2989 (2002).
53. See A. K. Tagantsev, A. L. Kholkin, E. L. Colla, K. G. Brooks, and N. Setter, Integr. Ferroelectr. IFEREU 1058-4587 10, 189 (1995), and references therein.
54. U. Karrer, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1313275 77, 2012 (2000).
55. A. Rizzi and H. Lüth, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1435067 80, 530 (2002).
56. J. G. Simmons, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1729774 34, 2581 (1963).
57. C. T. Black and J. J. Welser, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.753713 46, 776 (1999).
58. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.357589 76, 2405 (1994).
59. A. K. Tagantsev and I. A. Stolichnov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123539 74, 1326 (1999).
60. S. K. Streiffer, C. Basceri, C. B. Parker, S. E. Lash, and A. I. Kingon, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371404 86, 4565 (1999).
61. N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.80.1988 80, 1988 (1998).
62. R. Meyer and H. Kohlstedt, cond-mat/0312609 (unpublished).
63. C. L. Jia, J. Rodríguez Contreras, J. Schubert, M. Lentzen, U. Poppe, H. Kohlstedt, K. Urban, and R. Waser, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(02)01985-1 247, 381 (2003).
64. M. Ye. Zhuravlev, R. F. Sabirianov, S. S. Jaswal, and E. Y. Tsymbal, cond-mat/0502109 (unpublished).