Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

Nano Letters

Volumn 9, Issue 10, 2009, Pages 3539-3543

  Gruverman, A ^a   Wu, D ^b   Lu, H ^a   Wang, Y ^a   Jang, H W ^c   Folkman, C M ^c   Zhuravlev, M Ye ^a,d   Felker, D ^c   Rzchowski, M ^c   Eom, C B ^c   Tsymbal, E Y ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

^d KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; ELECTRONIC TRANSPORT PROPERTIES; ELECTRORESISTANCE; FERROELECTRIC TUNNEL JUNCTIONS; LATERAL SCALE; NANO SCALE; NON-VOLATILE MEMORIES; ORDERS OF MAGNITUDE; POLARIZATION REVERSALS; ROOM TEMPERATURE; SCANNING PROBE MICROSCOPY TECHNIQUES; SINGLE-CRYSTALLINE THIN FILMS; THICK EPITAXIAL; TUNNELING CURRENT;

ELECTRIC RESISTANCE; FERROELECTRICITY; LOGIC DEVICES; NANOSTRUCTURED MATERIALS; POLARIZATION; SCANNING PROBE MICROSCOPY; TRANSPORT PROPERTIES; TUNNEL JUNCTIONS; TUNNELS;

WIND TUNNELS;

EID: 72849138482     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901754t     Document Type: Article

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