Optical band gap of BiFe O3 grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Ihlefeld, J F ^a,b   Podraza, N J ^a   Liu, Z K ^a   Rai, R C ^c   Xu, X ^c   Heeg, T ^d   Chen, Y B ^e   Li, J ^f   Collins, R W ^f   Musfeldt, J L ^c   Pan, X Q ^e   Schubert, J ^d   Ramesh, R ^b,g   Schlom, D G ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

^e UNIVERSITY OF MICHIGAN   (United States)

^f UNIVERSITY OF TOLEDO   (United States)

^g UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; ENERGY GAP; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES;

FOUR-CIRCLE X-RAY DIFFRACTION; MULTIPLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY; OPTICAL BAND GAP; OXYGEN ACTIVITY;

THIN FILMS;

EID: 42149124395     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2901160     Document Type: Article

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