Solid-state memories based on ferroelectric tunnel junctions

Nature Nanotechnology

Volumn 7, Issue 2, 2012, Pages 101-104

  Chanthbouala, André ^a,b   Crassous, Arnaud ^a,b   Garcia, Vincent ^a,b   Bouzehouane, Karim ^a,b   Fusil, Stéphane ^a,b,c   Moya, Xavier ^d   Allibe, Julie ^a,b   Dlubak, Bruno ^a,b   Grollier, Julie ^a,b   Xavier, Stéphane ^a   Deranlot, Cyrile ^a,b   Moshar, Amir ^e   Proksch, Roger ^e   Mathur, Neil D ^d   Bibes, Manuel ^a,b   Barthélémy, Agnès ^a,b  

^a ECOLE POLYTECHNIQUE   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c UNIVERSITÉ D EVRY VAL D ESSONNE   (France)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e United States   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRICITY; MAGNETIC STORAGE; QUANTUM THEORY; RANDOM ACCESS STORAGE; TUNNELLING MAGNETORESISTANCE;

ELECTRIC POLARIZATION; FERROELECTRIC SWITCHING; FERROELECTRIC TUNNEL JUNCTIONS; FERROMAGNETIC ELECTRODES; HYSTERETIC DEPENDENCE; MAGNETIC RANDOM ACCESS MEMORY; QUANTUM MECHANICAL TUNNELLING; TUNNEL MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

IRON; MAGNETIC NANOPARTICLE;

ARTICLE; CONTROLLED STUDY; DEVICES; ELECTRIC CURRENT; ELECTRIC RESISTANCE; ELECTRODE; FERROELECTRIC DEVICE; FERROELECTRIC TUNNEL JUNCTION; MEMORY; PHYSICAL RESISTANCE; POLARIZATION; PRIORITY JOURNAL; ROOM TEMPERATURE; SOLID STATE;

EID: 84856874706     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2011.213     Document Type: Article

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