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Advanced Functional Materials

Volumn 21, Issue 23, 2011, Pages 4487-4492

Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches

(6) Menzel, Stephan a Waters, Matthias b Marchewka, Astrid a Böttger, Ulrich a Dittmann, Regina b Waser, Rainer a

a RWTH AACHEN UNIVERSITY (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

memristors; nanoelectronics; oxygen vacancies; resistive switching; switching kinetics; temperature simulation

Indexed keywords

CHEMICAL REDUCTION; DESIGN RULES; ELEVATED TEMPERATURE; EXPERIMENTAL DATA; EXPONENTIAL INCREASE; FINITE ELEMENT MODELS; ION CONDUCTIVITIES; NON-LINEARITY; ORDERS OF MAGNITUDE; RESISTIVE SWITCHING; SRTIO; SWITCHING KINETICS; TEMPERATURE INCREASE; TEMPERATURE SIMULATION; TI ELECTRODE;

FINITE ELEMENT METHOD; KINETICS; MEMRISTORS; NANOELECTRONICS; OXYGEN; OXYGEN VACANCIES;

SWITCHING;

EID: 82555171565 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201101117 Document Type: Article

Times cited : (316)

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