Piezoresponse scanning force microscopy: What quantitative information can we really get out of piezoresponse measurements on ferroelectric thin films

Integrated Ferroelectrics

Volumn 44, Issue , 2002, Pages 113-124

  Harnagea, Catalin ^a   Pignolet, Alain ^a   Alexe, Marin ^a   Hesse, Dietrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Electromechanical characterization; Ferroelectric domains; Piezoelectric tensor; Piezoresponse scanning force microscopy

Indexed keywords

ELECTROMECHANICAL DEVICES; FERROELECTRICITY; MEASUREMENT THEORY; PIEZOELECTRICITY; POLARIZATION; SCANNING ELECTRON MICROSCOPY; TENSORS;

ELECTROMECHANICAL CHARACTERIZATION; FERROELECTRIC DOMAINS; PIEZOELECTRIC COEFFICIENTS; PIEZORESPONSE SIGNALS;

FERROELECTRIC THIN FILMS;

EID: 0142024298     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718197     Document Type: Article

References (24)

1. A. Gruverman, H. Tokumoto, S.A. Prakash, S. Aggarwal, B. Yang, M. Wuttig, R. Ramesh, O. Auciello, and T. Venkatesan, Appl. Phys. Lett. 71, 3492 (1997).
2. L. M. Eng, Nanotechnotogy 10, 405 (1999).
3. A. Gruverman, O. Auciello, and H. Tokumoto, Appl. Phys. Lett. 69, 3191 (1996).
4. C. Hamagea, A. Pignolet, M. Alexe, D. Hesse, and U. Gösele, Mater. Res. Soc. Symp. Proc. 596 (Ferroelectric Thin Films VIII), 351 (2000).
5. J. W. Hong, W. Jo, D. C. Kim, S. M. Cho, H. J. Nam, H. M. Lee, and J. U. Bu, Appl. Phys. Lett. 75, 3183 (1999).
6. A. Gruverman and M. Tanaka, J. Appl. Phys. 89, 1836 (2000).
7. M. Abplanalp, L. M. Eng, and P. Günter, Appl. Phys. A-Mater. 66, S231 (1998).
8. S. V. Kalinin and D. A. Bonnell, Appl. Phys. Lett. 78, 1116 (2001).
9. S. Hong, J. Woo, H. Shin, J. U. J. Suwon, Y. E. Pak, E. L. Colla. N. Setter, E. Kim. and K. No, J. Appl. Phys. 89. 1377 (2001).
10. J. A. Christman, R. R. Woolcott, Jr., A. I. Kingon, and R. J. Nemanich, Appl. Phys. Lett. 73, 3851 (1998).
11. A. F. Devonshire, Philos. Mag. 42, 1065 (1951).
12. W. G. Cady, Piezoelectricity (Dover Publications, Inc., New York, 1964).
13. X. Du, U. Belegundu, and K. Uchino, Jpn. J. Appl. Phys. 36, 5580 (1997).
14. X.-H. Du, Q.-M. Wang, U. Belegundu, A. Bhalla, and K. Uchino, Mater. Lett. 40, 109 (1999).
15. C. Harnagea, A. Pignolet, M. Alexe, D. Hesse, and U. Gösele, Appl. Phys. A 70, 261 (2000).
16. K. Franke, J. Besold, W. Haessler, and C. Seegebarth, Surf. Sci. Lett. 302, L283 (1994).
17. T. Hidaka, T. Maruyama, M. Saitoh, N. Mikoshiba, M. Shimizu, T. Shiosaki, L. A. Wills, R. Hiskes, S. A. Dicarolis, and J. Amano, Appl. Phys. Lett. 68, 2358 (1996).
18. A. Gruverman, O. Auciello, and H. Tokumoto, Integr. Ferroelectr. 19, 49 (1998).
19. A. Pignolet, C. Hamagea, A. R. James, S. Senz, C. Schaefer, N. D. Zakharov, and D. Hesse, Mater. Res. Soc. Symp. Proc. 596 (Ferroelectric Thin Films VIII), 415 (2000).
20. A. Roelofs, U. Boettger, R. Waser, F. Schlaphof, S. Trogisch, and L. M. Eng, Appl. Phys. Lett. 77, 3444 (2000).
21. E. C. Subbarao, J. Phys. Chem. Solids 23, 665 (1962).
22. A. Gruverman, A. Pignolet, K. M. Satyalakshmi, M. Alexe, N. D. Zakharov, and D. Hesse, Appl. Phys. Lett. 76, 106 (2000).
23. G. D. Hu, J. B. Xu, and I. H. Wilson, Appl. Phys. Lett. 75, 1610 (1999).
24. A. Sa Neto and L. E. Cross, J. Mater. Sci. 17, 1409 (1982).