The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films

Journal of Physics Condensed Matter

Volumn 16, Issue 13, 2004, Pages 2253-2264

  Catalan, G ^a,c   Sinnamon, L J ^b   Gregg, J M ^b  

^a INSTITUTO MEDITERRÁNEO DE ESTUDIOS AVANZADOS   (Spain)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^c UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CERAMIC MATERIALS; EPITAXIAL GROWTH; FREE ENERGY; MICROSTRUCTURE; PERMITTIVITY; PHASE TRANSITIONS; RELAXATION PROCESSES; SCHOTTKY BARRIER DIODES; STRONTIUM COMPOUNDS;

CURIE TEMPERATURE; FLEXOELECTRICITY; STRAIN GRADIENT; STRAIN RELAXATION;

FERROELECTRIC THIN FILMS;

EID: 2142766885     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/13/006     Document Type: Article

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