New AFM-based tool for testing dielectric quality and reliability on a nanometer scale

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 941-946

  Olbrich, Alexander ^a,b   Ebersberger, Bernd ^a   Boit, Christian ^a   Vancea, J ^b   Hoffmann, H ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC PROPERTIES; MOS DEVICES; RELIABILITY;

EEPROM TUNNELING OXIDE; THIN GATE OXIDE;

INTEGRATED CIRCUIT TESTING;

EID: 0033145248     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00127-4     Document Type: Article

References (11)

1. L. Manchanda, in Semiconductor Characterization - Present status and future needs, edited by W.M. Bullis, D.G. Seiler, and A.C. Diebold, AIP, New York, 123 (1996)
2. D.R. Wolters, J.F. Verwey, in Instabilities in silicon devies, edited by G. Barbottin, A. Vapaille, Elsevier Sci. Publ. B.V., North Holland (1996)
3. J.C. Lee, I. Chen, C. Hu, IEEE Trans. Electr. Dev. 35 (12), 2268 (1988)
4. Digital instruments, Vecco Metrology group, 112 Robin Hill Road, Santa Barbara, California 93103, USA, http://www.di.com
5. th An., Reno, Nevada, 163 (1998)
6. A. Olbrich, B. Ebersberger, C. Boit, Appl. Phys. Lett. 73, 3114 (1998)
7. R.H. Fowler, L. Nordheim, Proc. Royal Soc. London, Ser A119,173 (1928)
8. R.H. Good, E.W. Müller, in Handbuch der Physik, edited by S. Flügge, Springer Verlag, Berlin (1956)
9. A. Olbrich, B. Ebersberger, C. Boit, Ph. Niedermann, W. Hänni, J. Vancea, H. Hoffmann, accepted for publ. in J. Vac. Sci. Technol. B (1999)
10. Micrion Corporation, http://www.micrion.com
11. th annual, Reno, Nevada, 163 (1999)