Domain wall nanoelectronics

Reviews of Modern Physics

Volumn 84, Issue 1, 2012, Pages 119-156

  Catalan, G ^a,b   Seidel, J ^c,d,e   Ramesh, R ^c,d,f   Scott, J F ^g  

^a INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

^b CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e UNIVERSITY OF NEW SOUTH WALES   (Australia)

^f Lawrence Berkeley National Laboratory   (United States)

^g UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON HOLOGRAPHY; FERROELECTRIC MATERIALS; FERROELECTRICITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC DOMAINS; MAGNETS; MICROELECTRONICS; NANOELECTRONICS; TRANSMISSION ELECTRON MICROSCOPY;

DOMAIN WALL CONDUCTIVITIES; DOMAIN-WALL MOBILITY; FERROELECTRIC DOMAINS; FUNCTIONAL PROPERTIES; MAGNETOELECTRIC MATERIALS; NANOELECTRONIC DEVICES; POLARIZATION SENSITIVITY; SEMICONDUCTING OXIDE;

DOMAIN WALLS;

EID: 84856751024     PISSN: 00346861     EISSN: 15390756     Source Type: Journal    
DOI: 10.1103/RevModPhys.84.119     Document Type: Article

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