Low-voltage embedded NAND-ROM macros using data-aware sensing reference scheme for VDDmin, speed and power improvement

IEEE Journal of Solid-State Circuits

Volumn 48, Issue 2, 2013, Pages 611-623

  Yang, Shu Meng ^a   Chang, Meng Fan ^a   Chiang, Chi Chuang ^a   Chen, Ming Pin ^a,b   Yamauchi, Hiroyuki ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Low voltage; NAND ROM; reference voltage; ROM; sense amplifier; VDDmin

Indexed keywords

LOW VOLTAGES; NAND-ROM; REFERENCE VOLTAGES; SENSE AMPLIFIER; VDDMIN;

ELECTRICAL ENGINEERING;

ROM;

EID: 84873313006     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2229068     Document Type: Article

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