A high-density 45 nm SRAM using small-signal non-strobed regenerative sensing

IEEE Journal of Solid-State Circuits

Volumn 44, Issue 1, 2009, Pages 163-173

  Verma, Naveen ^a   Chandrakasan, Anantha P ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

Auto zeroing; Device variation; Offset compensation; Sense amplifier; SRAM

Indexed keywords

DEGRADATION; SIGNAL PROCESSING; STATIC RANDOM ACCESS STORAGE;

AUTO-ZEROING; DEVICE VARIATION; OFFSET COMPENSATION; SENSE-AMPLIFIER; SRAM;

SENSITIVITY ANALYSIS;

EID: 58149267841     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.2006428     Document Type: Conference Paper

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