High-density 3-D metal-fuse PROM featuring 1.37uμm2 1T1R Bit Cell in 32nm high-k metal-gate CMOS technology

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2009, Pages 28-29

  Kulkarni, Sarvesh H ^a   Chen, Zhanping ^a   He, Jun ^a   Jiang, Lei ^a   Pedersen, Brian ^a   Zhang, Kevin ^a  

^a INTEL CORPORATION   (United States)

Author keywords

High density PROM and metal fuse

Indexed keywords

ARRAY DESIGN; BIT CELL; CELL TOPOLOGY; CMOS TECHNOLOGY; FUSE-ELEMENT; HIGH-DENSITY; HIGH-DENSITY PROM AND METAL FUSE; METAL-GATE; MULTI-BITS; SECURITY PROTECTION;

CMOS INTEGRATED CIRCUITS; POLYSILICON; PROM; THREE DIMENSIONAL; VLSI CIRCUITS;

METALS;

EID: 70449441077     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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