-
1
-
-
0036474722
-
Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration
-
Feb
-
K. A. Bowman, S. G. Duvall, and J. D. Meindl, "Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration," IEEE J. Solid-State Circuits, vol. 37, no. 2, pp. 183-190, Feb. 2002.
-
(2002)
IEEE J. Solid-State Circuits
, vol.37
, Issue.2
, pp. 183-190
-
-
Bowman, K.A.1
Duvall, S.G.2
Meindl, J.D.3
-
2
-
-
0036954781
-
Modeling and analysis of leakage power considering within-die process variations
-
A. Srivastava, R. Bai, D. Blaauw, and D. Sylvester, "Modeling and analysis of leakage power considering within-die process variations," in Proc. Int. Symp. Low Power Electron. Des., 2002, pp. 64-67.
-
(2002)
Proc. Int. Symp. Low Power Electron. Des
, pp. 64-67
-
-
Srivastava, A.1
Bai, R.2
Blaauw, D.3
Sylvester, D.4
-
3
-
-
0032639191
-
Microprocessor reliability performance as a function of die location for a 0.25 μ, five layer metal CMOS logic process
-
W. Riordan, R. Miller, J. Sherman, and J. Hicks, "Microprocessor reliability performance as a function of die location for a 0.25 μ, five layer metal CMOS logic process," in IEEE Int. Reliab. Phys. Symp. Proc., 1999, pp. 1-11.
-
(1999)
IEEE Int. Reliab. Phys. Symp. Proc
, pp. 1-11
-
-
Riordan, W.1
Miller, R.2
Sherman, J.3
Hicks, J.4
-
4
-
-
0034429814
-
Delay variability: Sources, impacts and trends
-
S. Nassif, "Delay variability: Sources, impacts and trends," in Proc. IEEE Int. Solid-State Circuits Conf., Dig. Tech. Papers, 2000, pp. 268-369.
-
(2000)
Proc. IEEE Int. Solid-State Circuits Conf., Dig. Tech. Papers
, pp. 268-369
-
-
Nassif, S.1
-
5
-
-
0033221245
-
An 18-μA standby current 1.8-V, 200-MHz microprocessor with self-substrate-biased data-retention mode
-
Nov
-
H. Mizuno, K. Ishibashi, and T. Shimura, "An 18-μA standby current 1.8-V, 200-MHz microprocessor with self-substrate-biased data-retention mode," IEEE J. Solid-State Circuits, vol. 34, no. 11, pp. 1492-1500, Nov. 1999.
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, Issue.11
, pp. 1492-1500
-
-
Mizuno, H.1
Ishibashi, K.2
Shimura, T.3
-
6
-
-
0029484356
-
Channel doping engineering of mosfet with adaptable threshold voltage using body effect for low voltage and low power applications
-
H. Wann, C. Hu, K. Noda, D. Sinitsky, F. Assaderaghi, and J. Bokor, "Channel doping engineering of mosfet with adaptable threshold voltage using body effect for low voltage and low power applications," in Proc. Tech. Papers Int. Symp. VLSI Technol., Syst., Appl., 1995, pp. 159-163.
-
(1995)
Proc. Tech. Papers Int. Symp. VLSI Technol., Syst., Appl
, pp. 159-163
-
-
Wann, H.1
Hu, C.2
Noda, K.3
Sinitsky, D.4
Assaderaghi, F.5
Bokor, J.6
-
7
-
-
0030086605
-
2 2-D discrete cosine transform core processor with variable-threshold-voltage scheme
-
2 2-D discrete cosine transform core processor with variable-threshold-voltage scheme," in Dig. Tech. Papers IEEE Int. Solid-State Circuits Conf., 1996, pp. 166-167, 437.
-
(1996)
Dig. Tech. Papers IEEE Int. Solid-State Circuits Conf
-
-
Kuroda, T.1
Fujita, T.2
Mita, S.3
Nagamatu, T.4
Yoshioka, S.5
Sano, F.6
Norishima, M.7
Murota, M.8
Kako, M.9
Kinugawa, M.10
Kakumu, M.11
Sakurai, T.12
-
8
-
-
0036474788
-
A 1.2-GIPS/w microprocessor using speed-adaptive threshold-voltage CMOS with forward bias
-
Feb
-
M. Miyazaki, G. Ono, and K. Ishibashi, "A 1.2-GIPS/w microprocessor using speed-adaptive threshold-voltage CMOS with forward bias," IEEE J. Solid-State Circuits, vol. 37, no. 2, pp. 210-217, Feb. 2002.
-
(2002)
IEEE J. Solid-State Circuits
, vol.37
, Issue.2
, pp. 210-217
-
-
Miyazaki, M.1
Ono, G.2
Ishibashi, K.3
-
9
-
-
0031643597
-
A delay distribution squeezing scheme with speed-adaptive threshold-voltage CMOS (SA-Vt CMOS) for low voltage LSls
-
M. Miyazaki, H. Mizuno, and K. Ishibashi, "A delay distribution squeezing scheme with speed-adaptive threshold-voltage CMOS (SA-Vt CMOS) for low voltage LSls," in Proc. Int. Symp. Low Power Electron. Des. Proc., 1998, pp. 48-53.
-
(1998)
Proc. Int. Symp. Low Power Electron. Des. Proc
, pp. 48-53
-
-
Miyazaki, M.1
Mizuno, H.2
Ishibashi, K.3
-
10
-
-
0034315851
-
A dynamic voltage scaled microprocessor system
-
Nov
-
T. Burd, T. Pering, A. Stratakos, and R. Brodersen, "A dynamic voltage scaled microprocessor system," IEEE J. Solid-State Circuits, vol. 35, no. 11, pp. 1571-1580, Nov. 2000.
-
(2000)
IEEE J. Solid-State Circuits
, vol.35
, Issue.11
, pp. 1571-1580
-
-
Burd, T.1
Pering, T.2
Stratakos, A.3
Brodersen, R.4
-
11
-
-
0036917242
-
Combined dynamic voltage scaling and adaptive body biasing for lower power microprocessors under dynamic workloads
-
S. M. Martin, K. Flautner, T. Mudge, and D. Blaauw, "Combined dynamic voltage scaling and adaptive body biasing for lower power microprocessors under dynamic workloads," in Proc. IEEE/ACM Int. Conf. Comput.-Aided Des., 2002, pp. 721-725.
-
(2002)
Proc. IEEE/ACM Int. Conf. Comput.-Aided Des
, pp. 721-725
-
-
Martin, S.M.1
Flautner, K.2
Mudge, T.3
Blaauw, D.4
-
12
-
-
0142196052
-
Comparison of adaptive body bias (ABB) and adaptive supply voltage (ASV) for improving delay and leakage under the presence of process variation
-
Oct
-
T. Chen and S. Naffziger, "Comparison of adaptive body bias (ABB) and adaptive supply voltage (ASV) for improving delay and leakage under the presence of process variation," IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 11, no. 5, pp. 888-899, Oct. 2003.
-
(2003)
IEEE Trans. Very Large Scale Integr. (VLSI) Syst
, vol.11
, Issue.5
, pp. 888-899
-
-
Chen, T.1
Naffziger, S.2
-
13
-
-
0038528639
-
Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors
-
May
-
J. Tschanz, S. Narendra, R. Nair, and V. De, "Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors," IEEE J. Solid-State Circuits, vol. 38, no. 5, pp. 826-829, May 2003.
-
(2003)
IEEE J. Solid-State Circuits
, vol.38
, Issue.5
, pp. 826-829
-
-
Tschanz, J.1
Narendra, S.2
Nair, R.3
De, V.4
-
14
-
-
0036858210
-
Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
-
Nov
-
J. W. Tschanz, J. T. Kao, S. G. Narenda, R. Nair, D. A. Antoniadis, A. P. Chandrakasan, and V. De, "Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage," IEEE J. Solid-State Circuits, vol. 37, no. 11, pp. 1396-1402, Nov. 2002.
-
(2002)
IEEE J. Solid-State Circuits
, vol.37
, Issue.11
, pp. 1396-1402
-
-
Tschanz, J.W.1
Kao, J.T.2
Narenda, S.G.3
Nair, R.4
Antoniadis, D.A.5
Chandrakasan, A.P.6
De, V.7
-
16
-
-
8444237006
-
Abnormal transconductance and transient effects in partially depleted SOI MOSFETs
-
Jan
-
Y. Zhang, D. K. Schroder, H. Shin, S. Hong, T. Wetteroth, and S. Wilson, "Abnormal transconductance and transient effects in partially depleted SOI MOSFETs," Solid-State Electron., vol. 43, pp. 51-56, Jan. 1999.
-
(1999)
Solid-State Electron
, vol.43
, pp. 51-56
-
-
Zhang, Y.1
Schroder, D.K.2
Shin, H.3
Hong, S.4
Wetteroth, T.5
Wilson, S.6
-
18
-
-
0028736474
-
Low-power digital design
-
M. Horowitz, T. Indermaur, and R. Gonzalez, "Low-power digital design," in Dig. Tech. Papers IEEE Symp. Low Power Electron., 1994, pp. 8-11.
-
(1994)
Dig. Tech. Papers IEEE Symp. Low Power Electron
, pp. 8-11
-
-
Horowitz, M.1
Indermaur, T.2
Gonzalez, R.3
-
19
-
-
2542626986
-
Time complexity of genetic algorithms on exponentially scaled problems Univ. Illinois at Urbana-Champaign, Urbana
-
Tech. Rep. 2000015
-
F. G. Lobo, D. E. Goldberg, and M. Pelikan, Time complexity of genetic algorithms on exponentially scaled problems Univ. Illinois at Urbana-Champaign, Urbana, Tech. Rep. 2000015, 2000.
-
(2000)
-
-
Lobo, F.G.1
Goldberg, D.E.2
Pelikan, M.3
-
20
-
-
0035694264
-
Impact of gate direct tunneling current on circuit performance: A simulation study
-
Dec
-
C.-H. Choi, K.-Y. Nam, Z. Yu, and R. W. Dutton, "Impact of gate direct tunneling current on circuit performance: A simulation study," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2823-2829, Dec. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.12
, pp. 2823-2829
-
-
Choi, C.-H.1
Nam, K.-Y.2
Yu, Z.3
Dutton, R.W.4
|