A 1.25uμm2 cell 32Kb electrical fuse memory in 32nm CMOS with 700mv vddmin and parallel/serial interface

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2009, Pages 30-31

  Chung, Shine ^a   Chung, Tao Wen ^a   Ker, Po Yao ^a   Hsueh, Fu Lung ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL FUSE; HIGH DENSITY; HIGH-GAIN; SENSE AMPLIFIER;

MACROS;

VLSI CIRCUITS;

EID: 70449379039     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Chung et al., Symp on VLSI Cir., pp74-75, June, 2007.
2. J. Safran et al., Symp on VLSI Cir., pp72-73, June, 2007.
3. M. Alavi et al., IEDM, pp855-858, Dec., 1997.
4. S. Kothandaraman et al., JSSC, pp523-525, Dec., 2002.
5. G. Uhlmann, et al, IEEE ISSCC, pp406-407, Feb.,2008