A 56nm CMOS 99mm2 8Gb multi-level NAND Flash memory with "10MB/s program throughput

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2006, Pages

  Takeuchi, Ken ^a   Kameda, Yasushi ^a   Fujimura, Susumu ^a   Otake, Hiroyuki ^a   Hosono, Koji ^a   Shiga, Hitoshi ^a   Watanabe, Yoshihisa ^a   Futatsuyama, Takuya ^a   Shindo, Yoshihiko ^a   Kojima, Masatsugu ^a   Iwai, Makoto ^a   Shirakawa, Masanobu ^a   Ichige, Masayuki ^a   Hatakeyama, Kazuo ^a   Tanaka, Shinichi ^a   Kamel, Teruhiko ^b   Fu, Jia Yi ^b   Cernea, Adi ^c   Li, Yan ^c   Higashitani, Masaaki ^c   Hemink, Gertjan ^b   Sato, Shinji ^b   Oowada, Ken ^b   Lee, Shih Chung ^b   Hayashida, Naoki ^b   Wan, Jun ^c   Lutze, Jeffrey ^c   Tsao, Shouchang ^c   Mofidi, Mehrdad ^c   Sakurai, Kiyofumi ^a   Tokiwa, Naoya ^a   Waki, Hiroko ^a   Nozawa, Yasumitsu ^a   Kanazawa, Kazuhisa ^a   Ohshima, Shigeo ^a   more..

^a TOSHIBA CORPORATION   (Japan)

^b SanDisk Corporation   (United States)

^c NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MEMORY CELL SIZE; NAND FLASH MEMORY; NOISE-CANCELLATION CIRCUITS; PROGRAM THROUGHPUT;

CMOS INTEGRATED CIRCUITS; COMPUTER PROGRAMMING; FLASH MEMORY; PHASE NOISE;

NAND CIRCUITS;

EID: 33846227684     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)