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Volumn , Issue , 2011, Pages 206-207

An offset-tolerant current-sampling-based sense amplifier for sub-100nA-cell-current nonvolatile memory

Author keywords

[No Author keywords available]

Indexed keywords

NONVOLATILE STORAGE; THRESHOLD VOLTAGE;

EID: 79955743366     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2011.5746284     Document Type: Conference Paper
Times cited : (30)

References (7)
  • 1
    • 58149267843 scopus 로고    scopus 로고
    • A 34MB/s MLC write throughput 16 Gb NAND with all bit line architecture on 56nm technology
    • Jan.
    • R.-A. Cernea, et al. "A 34MB/s MLC write throughput 16 Gb NAND with all bit line architecture on 56nm technology," IEEE J. Solid-State Circuits, vol. 44, no. 1, pp.186-194, Jan. 2009.
    • (2009) IEEE J. Solid-State Circuits , vol.44 , Issue.1 , pp. 186-194
    • Cernea, R.-A.1
  • 2
    • 49549122064 scopus 로고    scopus 로고
    • A 50nm 8Gb NAND Flash memory with 100MB/s program throughput and 200MB/s DDR interface
    • Feb.
    • D. Nobunaga, et al., "A 50nm 8Gb NAND Flash memory with 100MB/s program throughput and 200MB/s DDR interface," ISSCC Dig. Tech. Papers, pp. 426-427, Feb. 2008.
    • (2008) ISSCC Dig. Tech. Papers , pp. 426-427
    • Nobunaga, D.1
  • 3
    • 77952228218 scopus 로고    scopus 로고
    • A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications
    • Feb
    • M.-F. Chang, et al., "A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications," ISSCC Dig. Tech. Papers, pp. 266-267, Feb 2010.
    • (2010) ISSCC Dig. Tech. Papers , pp. 266-267
    • Chang, M.-F.1
  • 4
    • 48649106381 scopus 로고    scopus 로고
    • A new self-aligned nitride MTP cell with 45nm CMOS fully compatible process
    • Dec.
    • C. E. Huang, et al., "A new self-aligned nitride MTP cell with 45nm CMOS fully compatible process," IEDM Dig. Tech. Papers, pp.91-94, Dec. 2007.
    • (2007) IEDM Dig. Tech. Papers , pp. 91-94
    • Huang, C.E.1
  • 5
    • 77952166363 scopus 로고    scopus 로고
    • A 0.13μm 64Mb multi-layered conductive metal-oxide memory
    • Feb.
    • C. J. Chevallier, et al., "A 0.13μm 64Mb multi-layered conductive metal-oxide memory," ISSCC Dig. Tech. Papers, pp.260-261, Feb. 2010.
    • (2010) ISSCC Dig. Tech. Papers , pp. 260-261
    • Chevallier, C.J.1
  • 6
    • 49549090473 scopus 로고    scopus 로고
    • A 45nm self-aligned-contact process 1Gb NOR Flash with 5MB/s program speed
    • Feb.
    • J. Javanifard, et al., "A 45nm self-aligned-contact process 1Gb NOR Flash with 5MB/s program speed," ISSCC Dig. Tech. Papers, pp.424-425, Feb. 2008.
    • (2008) ISSCC Dig. Tech. Papers , pp. 424-425
    • Javanifard, J.1
  • 7
    • 18744381344 scopus 로고    scopus 로고
    • A 130-nm 0.9V 66-MHz 8-Mb (256Kx32) local SONOS embedded Flash EEPROM
    • April
    • M.-K. Seo, et al. "A 130-nm 0.9V 66-MHz 8-Mb (256Kx32) local SONOS embedded Flash EEPROM," IEEE J. Solid-State Circuits, vol. 40, no. 4, pp. 877-883, April 2005.
    • (2005) IEEE J. Solid-State Circuits , vol.40 , Issue.4 , pp. 877-883
    • Seo, M.-K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.