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Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
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DOI 10.1016/j.mee.2007.01.239, PII S0167931707003061, Advanced Gate Stack Technology (ISAGST)
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Park S J, Kim W H, Lee H B R, Maeng W J and Kim H 2008 Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode Microelectron. Eng. 85 39-44 (Pubitemid 350116997)
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(2008)
Microelectronic Engineering
, vol.85
, Issue.1
, pp. 39-44
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Park, S.-J.1
Kim, W.-H.2
Lee, H.-B.-R.3
Maeng, W.J.4
Kim, H.5
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