메뉴 건너뛰기




Volumn 19, Issue 11, 2004, Pages 3353-3358

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

Author keywords

[No Author keywords available]

Indexed keywords

AIR; ALUMINA; ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM GROWTH; IRIDIUM; OXYGEN; PALLADIUM; PLATINUM; RUTHENIUM; TEMPERATURE;

EID: 11244346842     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0426     Document Type: Article
Times cited : (151)

References (28)
  • 1
    • 0001094776 scopus 로고    scopus 로고
    • 3 thin films for ultra large scale dynamic random-access memory. A review on the process integration
    • 3 thin films for ultra large scale dynamic random-access memory. A review on the process integration. Mater. Sci. Eng. B 56, 178 (1998).
    • (1998) Mater. Sci. Eng. B , vol.56 , pp. 178
    • Hwang, C.S.1
  • 3
    • 0142011571 scopus 로고    scopus 로고
    • Developing a conductive oxygen barrier for ferroelectric integration
    • J.A. Johnson, J.G. Lisoni, and D.J. Wouters: Developing a conductive oxygen barrier for ferroelectric integration. Microelectron. Eng. 70, 377 (2003).
    • (2003) Microelectron. Eng. , vol.70 , pp. 377
    • Johnson, J.A.1    Lisoni, J.G.2    Wouters, D.J.3
  • 5
    • 0142118479 scopus 로고    scopus 로고
    • Investigation of iridium as a gate electrode for deep sub-micron CMOS technology
    • M.A. Pawlak, T. Schram, K. Maex, and A. Vantomme: Investigation of iridium as a gate electrode for deep sub-micron CMOS technology. Microetectron. Eng. 70, 373 (2003).
    • (2003) Microetectron. Eng. , vol.70 , pp. 373
    • Pawlak, M.A.1    Schram, T.2    Maex, K.3    Vantomme, A.4
  • 6
    • 0038293361 scopus 로고    scopus 로고
    • Characterization of ruthenium and ruthenium oxide thin films deposited by chemical vapor deposition for CMOS gate electrode applications
    • edited by M.I. Gardner, S. De Gendt, J-P. Maria, and S. Stemmer (Mater. Res. Soc. Symp. Proc. Warrendale, PA)
    • F. Papadatos, S. Skordas, S. Consiglio, A.E. Kaloyeros, and E. Eisenbraun: Characterization of ruthenium and ruthenium oxide thin films deposited by chemical vapor deposition for CMOS gate electrode applications, in Novel Materials and Processes for Advanced CMOS, edited by M.I. Gardner, S. De Gendt, J-P. Maria, and S. Stemmer (Mater. Res. Soc. Symp. Proc. 745, Warrendale, PA, 2003) p. 61.
    • (2003) Novel Materials and Processes for Advanced CMOS , vol.745 , pp. 61
    • Papadatos, F.1    Skordas, S.2    Consiglio, S.3    Kaloyeros, A.E.4    Eisenbraun, E.5
  • 7
    • 1542574973 scopus 로고    scopus 로고
    • Characteristics of Pt and TaN metal gate electrode for high-κ hafnium oxide gate dielectrics
    • K-J. Choi and S-G. Yoon: Characteristics of Pt and TaN metal gate electrode for high-κ hafnium oxide gate dielectrics. Electrochem. Solid-State Lett. 7, G47 (2004).
    • (2004) Electrochem. Solid-State Lett. , vol.7
    • Choi, K.-J.1    Yoon, S.-G.2
  • 8
    • 1842854747 scopus 로고    scopus 로고
    • Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers
    • D. Josell, D. Wheeler, C. Witt, and T.P. Moffat: Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers. Electrochem. Solid-State Lett. 6, C143 (2003).
    • (2003) Electrochem. Solid-State Lett. , vol.6
    • Josell, D.1    Wheeler, D.2    Witt, C.3    Moffat, T.P.4
  • 9
    • 0346958625 scopus 로고    scopus 로고
    • Highly adhesive electroless Cu layer formation using an ultra thin ionized cluster beam (ICB)-Pd catalytic layer for sub-100 nm Cu interconnections
    • Z. Wang, O. Yaegashi, H. Sakaue, T. Takahagi, and S. Shingubara: Highly adhesive electroless Cu layer formation using an ultra thin ionized cluster beam (ICB)-Pd catalytic layer for sub-100 nm Cu interconnections. Jpn. J. Appl. Phys. 42, L1223 (2003).
    • (2003) Jpn. J. Appl. Phys. , vol.42
    • Wang, Z.1    Yaegashi, O.2    Sakaue, H.3    Takahagi, T.4    Shingubara, S.5
  • 10
    • 0842290049 scopus 로고    scopus 로고
    • Direct plating of low resistivity bright Cu film onto TiN barrier layer via Pd activation
    • J.J. Kim, S-K. Kim, and Y.S. Kim: Direct plating of low resistivity bright Cu film onto TiN barrier layer via Pd activation. J. Electrochem. Soc. 151, C97 (2004).
    • (2004) J. Electrochem. Soc. , vol.151
    • Kim, J.J.1    Kim, S.-K.2    Kim, Y.S.3
  • 11
    • 0242413108 scopus 로고    scopus 로고
    • Chemical vapor deposition of iridium, platinum, rhodium, and palladium
    • J.R.V. Garcia and T. Goto: Chemical vapor deposition of iridium, platinum, rhodium, and palladium. Mater. Trans. 44, 1717 (2003).
    • (2003) Mater. Trans. , vol.44 , pp. 1717
    • Garcia, J.R.V.1    Goto, T.2
  • 17
    • 0036801708 scopus 로고    scopus 로고
    • 3 dielectric film and on the performance of the TiN barrier in the Pt/Ru/TiN/p-Si/Si heterostructure
    • 3 dielectric film and on the performance of the TiN barrier in the Pt/Ru/ TiN/p-Si/Si heterostructure. Semicond. Sci. Technol. 17, 1048 (2002).
    • (2002) Semicond. Sci. Technol. , vol.17 , pp. 1048
    • Yoon, D.-S.1    Roh, J.S.2
  • 19
    • 0033708430 scopus 로고    scopus 로고
    • Ultrathin diffusion barriers/liners for gigascale copper metallization
    • A.E. Kaloyeros and E. Eisenbraun: Ultrathin diffusion barriers/liners for gigascale copper metallization. Annu. Rev. Mater. Sci. 30, 363 (2000).
    • (2000) Annu. Rev. Mater. Sci. , vol.30 , pp. 363
    • Kaloyeros, A.E.1    Eisenbraun, E.2
  • 20
    • 0038718815 scopus 로고    scopus 로고
    • Ruthenium oxide nanotube arrays fabricated by atomic layer deposition using a carbon nanotube template
    • Y-S. Min, E.J. Bae, K.S. Jeong, Y.J. Cho, J-H. Lee, W.B. Choi, and G-S. Park: Ruthenium oxide nanotube arrays fabricated by atomic layer deposition using a carbon nanotube template. Adv. Mater. 15, 1019 (2003).
    • (2003) Adv. Mater. , vol.15 , pp. 1019
    • Min, Y.-S.1    Bae, E.J.2    Jeong, K.S.3    Cho, Y.J.4    Lee, J.-H.5    Choi, W.B.6    Park, G.-S.7
  • 21
    • 1242287585 scopus 로고    scopus 로고
    • Atomic layer deposition of ruthenium thin films for copper glue layer
    • O-K. Kwon, J-H. Kim, H-S. Park, and S-W. Kang: Atomic layer deposition of ruthenium thin films for copper glue layer. J. Electrochem. Soc. 151, G109 (2004).
    • (2004) J. Electrochem. Soc. , vol.151
    • Kwon, O.-K.1    Kim, J.-H.2    Park, H.-S.3    Kang, S.-W.4
  • 27
    • 0037246283 scopus 로고    scopus 로고
    • Synthesis and characterization of fluorinated β-ketoiminate and imino-alcoholate Pd complexes: Precursors for palladium chemical vapor deposition
    • Y-H. Liu, Y-C. Cheng, Y-L. Tung, Y. Chi, Y-L. Chen, C-S. Liu, S-M. Peng, and G-H. Lee: Synthesis and characterization of fluorinated β-ketoiminate and imino-alcoholate Pd complexes: Precursors for palladium chemical vapor deposition. J. Mater. Chem. 13, 135 (2003).
    • (2003) J. Mater. Chem. , vol.13 , pp. 135
    • Liu, Y.-H.1    Cheng, Y.-C.2    Tung, Y.-L.3    Chi, Y.4    Chen, Y.-L.5    Liu, C.-S.6    Peng, S.-M.7    Lee, G.-H.8
  • 28
    • 0042452079 scopus 로고
    • An iteration procedure to calculate film compositions and thicknesses in electron-probe microanalysis
    • R.A. Waldo: An iteration procedure to calculate film compositions and thicknesses in electron-probe microanalysis. Microbeam Anal. 23, 310 (1988).
    • (1988) Microbeam Anal. , vol.23 , pp. 310
    • Waldo, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.