Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 39-44

  Park, Sang Joon ^a   Kim, Woo Hee ^a   Lee, Han Bo Ram ^a   Maeng, W J ^a   Kim, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Atomic layer deposition; C V measurements; Nucleation; Roughness; Ru

Indexed keywords

AMMONIA; ATOMIC LAYER DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; FILM GROWTH; HYSTERESIS; MOS CAPACITORS; NUCLEATION; RUTHENIUM;

NEGATIVE VALUES; ROOT MEAN SQUARE (RMS);

THIN FILMS;

EID: 36148994309     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.239     Document Type: Article

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