Atomic layer-deposited platinum in high-k/metal gate stacks

Semiconductor Science and Technology

Volumn 24, Issue 12, 2009, Pages

  Henkel, Christoph ^a   Abermann, Stephan ^a   Bethge, Ole ^a   Bertagnolli, Emmerich ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; DEPOSITION TEMPERATURES; EFFECTIVE WORK FUNCTION; EQUIVALENT OXIDE THICKNESS; GATE STACKS; HIGH-K DIELECTRIC; LOW RESISTIVITY; NANO SCALE; PLATINUM FILMS; POLYCRYSTALLINE; PRECURSOR RATIOS; PROCESS CONDITION; ROOT MEAN SQUARE ROUGHNESS; TRIMETHYL;

ATOMIC LAYER DEPOSITION; OXYGEN; PLATINUM; SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

OXIDE FILMS;

EID: 77954343890     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/12/125013     Document Type: Article

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