Superior TID hardness in TiN/HfO 2/TiN ReRAMs after proton radiation

IEEE Transactions on Nuclear Science

Volumn 59, Issue 5 PART 3, 2012, Pages 2550-2555

  He, Xiaoli ^a   Wang, Wei ^b   Butcher, Brian ^a   Tanachutiwat, Sansiri ^a   Geer, Robert E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Hafnium oxide; rad hard; resistive switching; total ionizing dose

Indexed keywords

ELECTROCHEMICAL METALLIZATION (ECM); ELECTRONICS APPLICATIONS; FORMATION KINETICS; FORMATION MECHANISM; INTERNAL FIELD; METALLIC FILAMENTS; PROTON RADIATIONS; RAD HARD; RADIATION RESPONSE; RADIATION-INDUCED; RESISTIVE SWITCHING; STRONG CONTRAST; SWITCHING PARAMETERS; TOTAL IONIZING DOSE; TRAP ASSISTED TUNNELING; VACANCY DENSITY; VALENCE CHANGE;

CHARGE TRAPPING; FLASH MEMORY; HAFNIUM; HAFNIUM OXIDES; HARDNESS; IONIZING RADIATION; RANDOM ACCESS STORAGE; SILICON; SWITCHING SYSTEMS; TITANIUM NITRIDE; VACANCIES;

RADIATION EFFECTS;

EID: 84867684233     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2208480     Document Type: Article

References (35)

1. ITRS, "International technology roadmap for semiconductor," 2010 [Online]. Available: http://www.itrs.net
2. K. Kinam, "Future memory technology: Challenges and opportunities," in Proc. Int. Symp. VLSI Technol., Syst. Appl., Hsinchu, 2008, pp. 5-9.
3. Y. Fujisaki, "Current status of nonvolatile semiconductor memory technology," Jpn. J. Appl. Phy., vol. 49, pp. 100001-100014, 2010.
4. M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, and S. Beltrami, "TID sensitivity of NAND flashmemory building blocks," IEEE Trans. Nucl. Sci., vol. 56, no. 4, pp. 1909-1913, Aug. 2009.
5. G. Cellere and A. Paccagnella, "A review of ionizing radiation effects in floating gate memories," IEEE Trans. Device Mater. Rel., vol. 4, no. 3, pp. 359-370, Sep. 2004. (Pubitemid 40049413)
6. F. Irom, D. N. Nguyen, M. Bagatin, G. Cellere, S. Gerardin, and A. Paccagnella, "Catastrophic failure in highly scaled commercial nand flash memories," IEEE Trans. Nucl. Sci., vol. 57, no. 1, pp. 266-271, Feb. 2010.
7. M. Liu, Z. Abid, W. Wang, X. He, Q. Liu, and W. Guan, "Multilevel resistive switching with ionic and metallic filaments," Appl. Phy. Lett., vol. 94, p. 233106, 2009.
8. Y.Wang, Q. Liu, S. Long,W.Wang, Q.Wang, M. Zhang, S. Zhang, Y. Li, Q. Zuo, J. Yang, and M. Liu, "Investigation of resistive switching in Cu-doped HfO thin film for multilevel non-volatile memory applications," Nanotechnology, vol. 21, p. 045202, 2010.
9. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, pp. 2632-2663, 2009.
10. G.Bersuker,D. C. Gilmer, D. Veksler, J. Yum, H. Park, S.Lian,L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Schluger, V. Iglesias, M. Porti, M. Nafria, W. Taylor, P. D. Kirsch, and R. Jammy, "Metal oxide RRAM switching mechanism based on conductive filament microscopic properties," in Proc. IEEE IEDM, San Francisco, CA, 2010, pp. 19.6.1-19.6.4.
11. G. Bersuker, J. Yum, L. Vandelli, A. Padovani, L. Larcher, V. Iglesias, M. Porti,M.Nafria, K.Mckenna,A. Shluger, P. Kirsch, and R. Jammy, "Grain boundary-driven leakage path formation in HfO dielectrics," Solid-State Electron., vol. 65-66, pp. 146-150, 2011.
12. Y. Wang, H. Lv, W. Wang, Q. Liu, S. Long, Q. Wang, Z. Huo, S. Zhang,Y. Li, Q. Zuo, W. Lian, J.Yang, andM. Liu, "Highly stable radiation-hardened resistive-switching memory," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1470-1472, Dec. 2010.
13. G.Cellere, L. Larcher, A. Paccagnella, A. Visconti, andM. Bonanomi, "Radiation induced leakage current in floating gate memory cells," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2144-2152, Dec. 2005. (Pubitemid 43269578)
14. G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami, J. R. Schwank, M. R. Shaneyfelt, and P. Paillet, "Total ionizing dose effects in NOR and NAND flash memories," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 1066-1070, Aug. 2007. (Pubitemid 47295073)
15. T. R. Oldham, M. R. Friendlich, A. B. Sanders, C. M. Seidleck, H. S. Kim, M. D. Berg, and K. A. LaBel, "TID and SEE response of advanced Samsung andMicron 4G NAND flash memories for the NASA MMS mission," in Proc. IEEE Rad. Effects Data Workshop, Quebec City, QC, Canada, 2009, pp. 114-122.
16. H. Schmidt, D.Walter, F. Gliem, B. Nickson, R. Harboe-Sorensen, and A. Virtanen, "TID and SEE tests of an advanced 8 Gbit NAND-flash memory," in Proc. IEEE Rad. Effects Data Workshop, Tucson, AZ, 2008, pp. 38-41.
17. W.Wester, C. Nelson, and J. Marriner, "Proton irradiation effects on 2 Gb flash memory," in Proc. IEEE Rad. Effects DataWorkshop, Atlanta, GA, 2004, pp. 68-71. (Pubitemid 40557054)
18. Q. Shi, Y. Ma,Y. Li, andY. Zhou, "Drastic reduction of leakage current in ferroelectric Bi Nd Ti O films by ionizing radiation," Nucl. Instrum. Methods B, vol. 269, pp. 452-454, 2011.
19. M. Zanata, N. Wrachien, and A. Cester, "Ionizing radiation effect on ferroelectric nonvolatile memories and its dependence on the irradiation temperature," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 3237-3245, Dec. 2008.
20. R. R. Katti, J. Lintz, L. Sundstrom, T. Marques, S. Scoppettuolo, and D. Martin, "Heavy-ion and total ionizing dose (TID) performance of a 1 Mbit magnetoresistive random access memory (MRAM)," in Proc. IEEE Rad. Effects Data Workshop, Quebec City, QC, Canada, 2009, pp. 103-105.
21. D. N. Nguyen and F. Irom, "Total ionizing dose (TID) tests on nonvolatile memories: Flash and MRAM," in Proc. IEEE Rad. Effects Data Workshop, Honolulu, HI, 2007, pp. 194-198.
22. A. Gasperin, A. Paccagnella, J. R. Schwank, G. Vizkelethy, F. Ottogalli, and F. Pellizzer, "Analysis of proton and heavy-ion irradiation effects on phase change memories with MOSFET and BJT selectors," IEEE Trans. Nucl. Sci., vol. 55, no. 5, pp. 3189-3196, Dec. 2008.
23. A. Gasperin, N. Wrachien, A. Paccagnella, F. Ottogalli, U. Corda, P. Fuochi, and M. Lavalle, "Total ionizing dose effects on 4 Mbit phase change memory arrays," IEEE Trans. Nucl. Sci., vol. 55, no. 4, pp. 2090-2097, Aug. 2008.
24. W. M. Tong, J. J. Yang, P. J. Kuekes, D. R. Stewart, R. S.Williams, E. DeIonno, E. E. King, S. C. Witczak, M. D. Looper, and J. V. Osborn, "Radiation hardness of TiO memristive junctions," IEEE Trans. Nucl. Sci., vol. 57, no. 3, pp. 1640-1643, Jun. 2010.
25. B. Butcher, X. He, M. Huang, Y.Wang, Q. Liu, H. Lv, M. Liu, and W. Wang, "Proton-based total-dose irradiation effects on Cu/HfO :Cu/Pt ReRAM devices," Nanotechnology, vol. 21, p. 475206, 2010.
26. D. C. Gilmer, G. Bersuker, H.-Y. Park, C. Park, B. Butcher, W. Wang, P. D. Kirsch, and R. Jammy, "Effects of RRAM stack configuration on forming voltage and current overshoot," in Proc. 3rd IEEE IMW, Monterey, CA, 2011, pp. 1-4.
27. C. Schindler, "Resistive switching in electrochemical metallization memory cells," Ph.D. dissertation, Faculty of Electrical Engineering and Information Technology, RWTH Aachen, Aachen, Germany, 2009.
28. Z. Xu, Y. Bando, W. Wang, X. Bai, and D. Golberg, "Real-time in situ HRTEM-resolved resistance switching of Ag S nanoscale ionic conductor," ACS Nano, vol. 4, pp. 2515-2522, 2010.
29. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Kozicki, "Study ofmultilevel programming in programmablemetallization cell (PMC) memory," IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1040-1047, May 2009.
30. K. McKenna and A. Shluger, "The interaction of oxygen vacancies with grain boundaries in monoclinic HfO ," Appl. Phy. Lett., vol. 95, p. 222111, 2009.
31. B. Miao, R. Mahapatra, R. Jenkins, J. Silvie, N. G. Wright, and A. B. Horsfall, "Radiation induced change in defect density in HfO-based MIM capacitors," IEEE Trans. Nucl. Sci., vol. 56, no. 5, pp. 2916-2924, Oct. 2009.
32. L. Vandelli, A. Padovani, L. Larcher, R. G. Southwick, W. B. Knowlton, and G. Bersuker, "Modeling temperature dependency (6-400 K) of the leakage current through the SiO/high-K stacks," in Proc. ESSDERC, Sevilla, Spain, 2010, pp. 388-391.
33. S. Cimino, A. Padovani, L. Larcher, V. V. Afanas'ev, H. J. Hwang, Y. G. Lee, M. Jurczac, D. Wouters, B. H. Lee, H. Hwang, and L. Pantisano, "A study of the leakage current in TiN/HfO/TiN capacitors," Microelectron. Eng, vol. 95, pp. 71-73, 2012.
34. G. Cellere, A. Paccagnella, A. Visconti,M. Bonanomi, P. Caprara, and S. Lora, "Amodel for TID effects on floating gatememory cells," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3753-3758, Dec. 2004. (Pubitemid 40044076)
35. K. Yokota, K. Nakamura, T. Kasuya, K. Mukai, and M. Ohnishi, "Resistivities of titanium nitride films prepared onto silicon by an ion beam assisted deposition method," J. Phys. D, Appl. Phys., vol. 37, pp. 1095-1101, 2004.