Modeling temperature dependency (6 - 400K) of the leakage current through the SiO2/high-K Stacks

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 388-391

  Vandelli, L ^a   Padovani, A ^a   Larcher, L ^a   Southwick III, R G ^b   Knowlton, W B ^b   Bersuker, G ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b Boise State University   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURE; CURRENT VOLTAGE; DOMINANT FACTOR; EFFECTIVE ENERGY; ELECTRON TRANSPORT; GATE CURRENT; GATE-LEAKAGE CURRENT; INDENTIFYING; PHYSICAL PROCESS; RELAXATION ENERGIES; SIMULATIONS AND MEASUREMENTS; STRONG INVERSION; TEMPERATURE DEPENDENCIES; TEMPERATURE RANGE; TRAP ASSISTED TUNNELING MODEL;

DEFECTS; ELECTRON-PHONON INTERACTIONS; HAFNIUM COMPOUNDS; SILICON COMPOUNDS; SOLID STATE DEVICES; TITANIUM NITRIDE;

LEAKAGE CURRENTS;

EID: 78649911118     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618204     Document Type: Conference Paper

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