Highly stable radiation-hardened resistive-switching memory

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1470-1472

  Wang, Yan ^a,b   Lv, Hangbing ^a   Wang, Wei ^c   Liu, Qi ^a   Long, Shibing ^a   Wang, Qin ^a   Huo, Zongliang ^a   Zhang, Sen ^a   Li, Yingtao ^a,b   Zuo, Qingyun ^a   Lian, Wentai ^a   Yang, Jianhong ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b LANZHOU UNIVERSITY   (China)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

ray; Conductive filament; radiation; resistive random access memory (RRAM)

Indexed keywords

CONDUCTIVE FILAMENTS; DOSE RANGE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NUCLEAR APPLICATION; OPERATION SPEED; RADIATION CONDITION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORIES; RETENTION CHARACTERISTICS; STABLE CHARACTERISTICS; STABLE RADIATION; TOTAL DOSE;

HAFNIUM COMPOUNDS; RANDOM ACCESS STORAGE;

RADIATION;

EID: 78649442260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2081340     Document Type: Article

References (12)

1. G. I. Meijer, "Who wins the nonvolatile memory race?" Science, vol. 319, no. 5870, pp. 1625-1626, Mar. 2008.
2. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007.
3. R. Sinclair and R. Beech, "High speed, radiation hard MRAM buffer," in Proc. Non-Volatile Memory Technol. Symp., 2002.
4. D. N. Nguyen, C. I. Lee, and A. H. Johnston, "Total ionizing dose effects on Flash memories," in Proc. IEEE Radiation Effects Data Workshop, 1998, pp. 100-103.
5. R. A. Moore, J. Benedetto, and B. J. Rod, "Total dose effect on ferroelectric PZT capacitors used as non-volatile storage elements," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1591-1596, Dec. 1993.
6. J. D. Maimon and K. K. Hunt, "Chalcogenide memory arrays: Characterization and radiation effects," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1878-1884, Dec. 2003.
7. 2," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2762-2768, Oct. 2007.
8. Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, "Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application," Nano Lett., vol. 9, no. 4, pp. 1636-1643, Mar. 2009.
9. 2 thin film for multilevel non-volatile memory applications," Nanotechology, vol. 21, no. 4, p. 045 202, Jan. 2010.
10. R. R. Soour and J. M. Mcgarrity, "Radiation effects on microelectronics in space," Proc. IEEE, vol. 76, no. 11, pp. 1443-1469, Nov. 1988.
11. 60Co irradiation of Flash arrays," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2912-2916, Oct. 2004.
12. 2 based MOS devices," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2272-2275, Dec. 2005.