Resistivities of titanium nitride films prepared onto silicon by an ion beam assisted deposition method

Journal of Physics D: Applied Physics

Volumn 37, Issue 7, 2004, Pages 1095-1101

  Yokota, Katsuhiro ^a   Nakamura, Kazuhiro ^a   Kasuya, Tomohiko ^a   Mukai, Katsuhisa ^a   Ohnishi, Masami ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ION BEAM ASSISTED DEPOSITION; IONIZATION; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS; TITANIUM NITRIDE; X RAY DIFFRACTION;

DEIONIZATION; ELECTRON BEAM EVAPORATORS; ELEMENT SOURCES; IONIZED METAL PLASMA (IMP) DEPOSITION;

SEMICONDUCTING FILMS;

EID: 2342427901     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/7/023     Document Type: Article

References (29)

1. Sze S M 1983 VLSI Technology (Auckland: McGraw-Hill) 369-70
2. Gardner D S, Meindle J D and Saraswat K C 1987 IEEE Trans. Electron. Devices ED-34 633-43
3. Claflin B, Binger M and Lucovsky G 1998 J. Vac. Sci. Technol. A16 1757-61
4. Eizenberg M, Littau K, Chanayen S, Liao M, Mosely R and Sinba A 1995 J. Vac. Sci. Technol. A 13 590-6
5. Faltermeier C, Golbderg C, Jones M, Upham A, Manger D, Peterson G, Lau J, Kaloyeros A E, Arkles B and Paranipe A 1997 J. Electrochem. Soc. 144 1002-8
6. Tanaka Y, Kim E, Forster J and Xu Z 1999 J. Vac. Sci. Technol. B 17 416-22
7. Chen G S, Guo J J, Lin C K, Hsu C S, Yang L C and Fang J S 2002 J. Vac. Sci. Technol. A 20 479-85
8. Takahashi T and Itoh H 1979 J. Mater. Sci. 14 1285-91
9. Echigoya J, Liu Z T, Imamura A and Takatsu S 1991 Thin Solid Films 198 293-301
10. Cheng H E and Hon M H 1996 J. Appl. Phys. 79 8047-53
11. Chen X and Mazumder J 1994 J. Appl. Phys. 76 3914-16
12. Danek M, Liao M, Tseng J, Littau K, Saigai D, Zhang H, Mosely R and Eizenberg M 1996 Appl. Phys. Lett. 68 1015-18
13. Goodmann R S, Materer N and Leone S R 1997 J. Vac. Sci. Technol. B 15 971-82
14. Joint Committee for Powder Diffraction Standards, Powder Diffraction File (Int. Center for Diffraction Data, Park Lane, 1989) No 38-1420
15. Joint Committee for Powder Diffraction Standards, Powder Diffraction File (Int. Center for Diffraction Data, Park Lane, 1989) No. 44-1095
16. Zeitler M, Gerlach J W, Kraus T and Rauschenbach B 1997 Appl. Phys. Lett. 70 1254-7
17. Weast R C 1990 Handbook of Chemistry and Physics (Boca Raton, FL: CRC Press) p D-40
18. Cullity B D 1978 Elements of X-Ray Diffraction (New York: Werley) chapter 3
19. Kroger R, Eizenberg M, Marcadal C and Chen L 2002 J. Appl. Phys. 915149-54
20. Weast R C 1990 Handbook of Chemistry and Physics (Boca Raton, FL: CRC Press) p D-41
21. Soffer S B 1965 J. Appl. Phys. 36 3947-8
22. Asahi H, Humoto T and Kawazu A 1974 Phys. Rev. B 9 3347-56
23. Yokoyama N, Hinode K and Homma Y 1991 J. Electrochem. Soc. 138 190-5
24. Charatan R M, Gross M E and Eaglesham D J 1994 J. Appl. Phys. 76 4377-82
25. Chang Y H, Chun J S, Oh J E, Won S J, Paek S H, Lee H D, Lee S I, Choi J S and Lee J G 1996 Appl. Phys. Lett. 68 2580-2
26. Kamiyama M and Haniwa T 1981 Thin Film Handbook ed Japan Society for The Promotion of Science, 131st Committee, Ohm-sha, Tokyo (part 1) chapter 1
27. Mayadas A F and Shazkes M 1970 Phys. Rev. B 1 1382-9
28. Ziegle J F and Biersach J P 2003 The Stopping and Range of Ions in Matter http://www.srim.org/SRIM/SRIMLEGL.htm
29. Matthews A, Fancey K, James A S and Leylaand A 1993 Surf. Coat. Technol. 61 121-5