Drastic reduction of leakage current in ferroelectric Bi 3.15Nd0.85Ti3O12 films by ionizing radiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 4, 2011, Pages 452-454

  Shi, Qunji ^a,b   Ma, Ying ^a,b   Li, Yushu ^a,b   Zhou, Yichun ^a,b  

^a XIANGTAN UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Ferroelectric thin films; Leakage current; Radiation

Indexed keywords

CRYSTALLINE STRUCTURE; EFFECTIVE TOOL; FOUR-ORDER; GRAIN-BOUNDARY BARRIERS; NONVOLATILE MEMORY DEVICES; REMNANT POLARIZATIONS; SI SUBSTRATES; SOL-GEL METHODS;

FERROELECTRIC THIN FILMS; FERROELECTRICITY; GRAIN BOUNDARIES; IONIZING RADIATION; LEAKAGE CURRENTS; NEODYMIUM; RADIATION SHIELDING; RADIOACTIVITY; SOL-GEL PROCESS; SURFACE ROUGHNESS;

FERROELECTRIC FILMS;

EID: 79251533158     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.12.066     Document Type: Article

References (20)

1. J.F. Scott Ferroelectric Memories 2000 Springer Berlin
2. H. Kohlstedt, Y. Mustafa, A. Gerber, A. Petraru, M. Fitsilis, R. Meyer, U. Bottger, and R. Waser Microelectron. Eng. 80 2005 296
3. H. Kohlstedt, and H. Ishiwara R. Waser, Ferroelectric Field Effect Transistors, Nanoelectronics and Information Technology, Advanced Electronic Materials and Novel Devices 2003 Wiley-VCH Weinheim
4. C.A.P. de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, and J.F. Scott Nature 374 1995 627
5. U. Chon, H.M. Jang, M.G. Kim, and C.H. Chang Phys. Rev. Lett. 89 2002 087601
6. B.H. Park, B.S. Kang, and S.D. Bu Nature 401 1999 682
7. K. Takahashi, K. Aizawa, B.E. Park, and H. Ishiwara Jpn. J. Appl. Phys. 44 2005 6218
8. H.-S. Jeon, G.-G. Lee, J.-H. Kim, J.-N. Kim, Y.-S. Choi, and B.-E. Park Ferroelectrics 368 2008 81
9. Y. Tabuchi, K. Aizawa, T. Tamura, K. Takahashi, H. Hoko, K. Kato, Y. Arimoto, and H. Ishiwara Integrat. Ferroelectr. 79 2006 211
10. M. Okuyama, H. Sugiyama, T. Nakaiso, and M. Noda Integrat. Ferroelectr. 34 2001 37
11. T.P. Ma, and J.P. Han IEEE Electron. Dev. Lett. 23 2002 386
12. D. Ito, N. Fujimura, and T. Ito Integrat. Ferroelectr. 49 2002 41
13. M. Dawber, K.M. Rabe, and J.F. Scott Rev. Mod. Phys. 77 2005 1083
14. H. Hu, and S.B. Krupanidhi J. Mater. Res. 9 1994 1484
15. Y.S. Li, Y. Ma, and Y.C. Zhou Appl. Phys. Lett. 94 2009 042903
16. C.C. Foster MRS Bull. 28 2003 136
17. J.F. Scott, C.A. Araujo, H.B. Meadows, L.D. McMillan, and A. Shawabkeh J. Appl. Phys. 66 1989 1444
18. R.N. Nowlin, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease, and W.E. Combs IEEE Trans. Nucl. Sci. 40 1993 1686
19. A.G. Chmielewski, M. Haji-Saeid, and S. Ahmed Nucl. Instrum. Methods B 236 2005 44
20. M.R. Cleland, L.A. Parks, and S. Cheng Nucl. Instrum. Methods B 208 2003 66