Analysis of proton and heavy-ion irradiation effects on phase change memories with MOSFET and BJT selectors

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3189-3196

  Gasperin, Alberto ^a,b   Paccagnella, Alessandro ^a,b   Schwank, James R ^c   Vizkelethy, Gyorgy ^c   Ottogalli, Federica ^d   Pellizzer, Fabio ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Numonyx   (Italy)

Author keywords

Chalcogenide material; GST; Heavy ions; Non volatile memories; Phase change memories (PCM); Radiation effects

Indexed keywords

BIPOLAR TRANSISTORS; HEAVY IONS; IONS; IRRADIATION; LEAKAGE CURRENTS; MOSFET DEVICES; PROTON IRRADIATION; PROTONS; PULSE CODE MODULATION; RADIATION; RADIATION EFFECTS; SYSTEM THEORY;

CELL DISTRIBUTIONS; CHALCOGENIDE MATERIAL; GST; HEAVY-ION IRRADIATIONS; HIGH TEMPERATURES; MOS FETS; NON-VOLATILE MEMORIES; PHASE CHANGE MEMORIES (PCM); PHASE-CHANGES; RETENTION CHARACTERISTICS; SMALL VARIATIONS;

PHASE CHANGE MEMORY;

EID: 58849149912     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007639     Document Type: Conference Paper

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