Radiation induced change in defect density in HfO2-based MIM capacitors

IEEE Transactions on Nuclear Science

Volumn 56, Issue 5, 2009, Pages 2916-2924

  Miao, Bing ^a   Mahapatra, Rajat ^a   Jenkins, Richard ^b   Silvie, Jon ^b   Wright, Nicholas G ^a   Horsfall, Alton B ^a,c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b BAE SYSTEMS   (United Kingdom)

^c ROYAL ACADEMY OF ENGINEERING   (United Kingdom)

Author keywords

Gamma ray; Hafnium oxide (HfO2); High k; Metal insulator metal capacitors (MIM capacitors); Radiation damage

Indexed keywords

BARRIER HEIGHTS; DIELECTRIC CONSTANTS; HAFNIUM OXIDE (HFO2); HIGH-K; IV CHARACTERISTICS; METAL-INSULATOR-METAL CAPACITORS; METAL-INSULATOR-METAL CAPACITORS (MIM CAPACITORS); MIM CAPACITORS; PERCOLATION MODELS; POOLE-FRENKEL MODEL; RADIATION-INDUCED; TRAP DENSITY; TRAP ENERGY;

CAPACITANCE; CAPACITORS; DEFECT DENSITY; DEFECTS; GAMMA RAYS; HAFNIUM; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METALS; OXIDES; RADIATION; RADIATION DAMAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLVENTS; STARS;

MIM DEVICES;

EID: 70350170087     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2015314     Document Type: Article

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